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Proceedings Paper

Scanner and etch co-optimized corrections for better overlay and CD control
Author(s): Ik-Hyun Jeong ; Seung-Woo Koo; Hyun-Sok Kim; Jae-Wuk Ju; Young-Sik Kim; Yong-Tae Cho; Heung-Joo Kim; Katja Viatkina; Tom van Hemert; Ruud de Wit; David Deckers; Owen Chen; Nang-Lyeom Oh; Marcus Musselman; Marcus Carbery; Ssuwei Chen; Lucian Schmidt; Heidi Kwon; Jae Gyoo Lee
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Paper Abstract

With shrinking design rules, the overall patterning requirements are getting aggressively tighter and tighter, driving requirements for on-product overlay performance below 2.5nm and CD uniformity requirements below 0.8nm. Achieving such performance levels will not only need performance optimization of individual tools but a holistic optimization of all process steps. This paper reports on the first step towards holistic optimization – co-optimized performance control of scanner and etch tools. In this paper we evaluate the use of scanner and etcher control parameters for improvement of after final etch overlay and CD performance. The co-optimization of lithography and etch identifies origins of the variabilities and assigns corrections to corresponding tools, handles litho-etch interactions and maximizes the correction capability by utilizing control interfaces of both scanner and etch tools in a single control loop. The product aims to improve total variability measured after etch as well as fingerprint matching between tools. For CD control we co-optimize the dose corrections on the lithography tool with the temperature corrections on the etcher. This control solution aims to correct CD variabilities originating at deposition, lithography and etcher. For overlay we co-optimize the overlay inter and intra-field grid interfaces on the scanner with the wafer edge ring height compensation on the etcher. The evaluation of both CD and overlay control solutions is performed for the 2xnm DRAM node of SK hynix DRAM group. YieldStar in-device metrology after core etch was used for CD control. On wafer verification showed an improvement of 23% of the total CD variation. In-device metrology after final etch was user for overlay control. Evaluation showed 35% improvement in total overlay variability due to scanner-etch co-optimization.

Paper Details

Date Published: 20 March 2019
PDF: 7 pages
Proc. SPIE 10963, Advanced Etch Technology for Nanopatterning VIII, 1096308 (20 March 2019); doi: 10.1117/12.2516578
Show Author Affiliations
Ik-Hyun Jeong , SK Hynix, Inc. (Korea, Republic of)
Seung-Woo Koo, SK Hynix, Inc. (Korea, Republic of)
Hyun-Sok Kim, SK Hynix, Inc. (Korea, Republic of)
Jae-Wuk Ju, SK Hynix, Inc. (Korea, Republic of)
Young-Sik Kim, SK Hynix, Inc. (Korea, Republic of)
Yong-Tae Cho, SK Hynix, Inc. (Korea, Republic of)
Heung-Joo Kim, SK Hynix, Inc. (Korea, Republic of)
Katja Viatkina, ASML Netherlands B.V. (Netherlands)
Tom van Hemert, ASML Netherlands B.V. (Netherlands)
Ruud de Wit, ASML Netherlands B.V. (Netherlands)
David Deckers, ASML Netherlands B.V. (Netherlands)
Owen Chen, ASML Netherlands B.V. (Netherlands)
Nang-Lyeom Oh, ASML Netherlands B.V. (Netherlands)
Marcus Musselman, Lam Research Corp. (United States)
Marcus Carbery, Lam Research Corp. (United States)
Ssuwei Chen, Lam Research Corp. (United States)
Lucian Schmidt, Lam Research Corp. (United States)
Heidi Kwon, Lam Research Corp. (United States)
Jae Gyoo Lee, Lam Research Corp. (United States)

Published in SPIE Proceedings Vol. 10963:
Advanced Etch Technology for Nanopatterning VIII
Richard S. Wise; Catherine B. Labelle, Editor(s)

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