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Proceedings Paper

Analyze line roughness sources using power spectral density (PSD)
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Paper Abstract

As device size continues to shrink, stochastic-induced roughness of resist features exposed by photolithography is of increasing concern to the semiconductor industry. In this paper, we propose an end-to-end approach for line roughness analysis by using the Line Roughness Module from our CDU solution family, which is a part of HMI’s metrology SEM tool the eP5. Simulated Scanning Electron Microscope (SEM) images of line/space patterns are used to verify the ability of the Module to reliably extract roughness related metrics. A set of imec EUV ADI images collected on our metrology SEM tool are analyzed by the Line Roughness Module, and wafer signature maps of various roughness metrics are obtained. These wafer maps not only help to analyze different roughness contribution sources, but also provide insights about feature roughness in a systematic way. Such information can be further used in a feedback loop to the scanner for model correction and process control.

Paper Details

Date Published: 26 March 2019
PDF: 8 pages
Proc. SPIE 10959, Metrology, Inspection, and Process Control for Microlithography XXXIII, 109592W (26 March 2019); doi: 10.1117/12.2516570
Show Author Affiliations
Lingling Pu, Hermes-Microvision Inc. (United States)
Teng Wang, Hermes-Microvision Inc. (United States)
Thomas J. Huisman, ASML Netherlands B.V. (Netherlands)
Ruben Maas, ASML Netherlands B.V. (Netherlands)
Maikel Goosen, ASML Netherlands B.V. (Netherlands)
Harm Dillen, ASML Netherlands B.V. (Netherlands)
Philippe Leray, IMEC (Belgium)
Wei Fang, Hermes-Microvision Inc. (United States)

Published in SPIE Proceedings Vol. 10959:
Metrology, Inspection, and Process Control for Microlithography XXXIII
Vladimir A. Ukraintsev; Ofer Adan, Editor(s)

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