Proceedings Paper
Achieving diffraction-limited performance on the Berkeley MET5| Format | Member Price | Non-Member Price |
|---|---|---|
| $17.00 | $21.00 |
Paper Abstract
The Berkeley MET5, funded by EUREKA, is a 0.5-NA EUV projection lithography tool located at the Advanced Light Source at Berkeley National Lab. Wavefront measurements of the MET5 optic have been performed using a custom in- situ lateral shearing interferometer suitable for high-NA interferometry. In this paper, we report on the most recent characterization of the MET5 optic demonstrating an RMS wavefront 0.31 nm, and discuss the specialized mask patterns, gratings, and illumination geometries that were employed to accommodate the many challenges associated with high-NA EUV interferometry.
Paper Details
Date Published: 26 March 2019
PDF: 7 pages
Proc. SPIE 10957, Extreme Ultraviolet (EUV) Lithography X, 109571X (26 March 2019); doi: 10.1117/12.2516384
Published in SPIE Proceedings Vol. 10957:
Extreme Ultraviolet (EUV) Lithography X
Kenneth A. Goldberg, Editor(s)
PDF: 7 pages
Proc. SPIE 10957, Extreme Ultraviolet (EUV) Lithography X, 109571X (26 March 2019); doi: 10.1117/12.2516384
Show Author Affiliations
Ryan Miyakawa, Lawrence Berkeley National Lab. (United States)
Chris Anderson, Lawrence Berkeley National Lab. (United States)
Wenhua Zhu, Lawrence Berkeley National Lab. (United States)
Geoff Gaines, Lawrence Berkeley National Lab. (United States)
Jeff Gamsby, Lawrence Berkeley National Lab. (United States)
Carl Cork, Lawrence Berkeley National Lab. (United States)
Chris Anderson, Lawrence Berkeley National Lab. (United States)
Wenhua Zhu, Lawrence Berkeley National Lab. (United States)
Geoff Gaines, Lawrence Berkeley National Lab. (United States)
Jeff Gamsby, Lawrence Berkeley National Lab. (United States)
Carl Cork, Lawrence Berkeley National Lab. (United States)
Gideon Jones, Lawrence Berkeley National Lab. (United States)
Michael Dickenson, Lawrence Berkeley National Lab. (United States)
Seno Rekawa, Lawrence Berkeley National Lab. (United States)
Weilun Chao, Lawrence Berkeley National Lab. (United States)
Sharon Oh, Lawrence Berkeley National Lab. (United States)
Patrick Naulleau, Lawrence Berkeley National Lab. (United States)
Michael Dickenson, Lawrence Berkeley National Lab. (United States)
Seno Rekawa, Lawrence Berkeley National Lab. (United States)
Weilun Chao, Lawrence Berkeley National Lab. (United States)
Sharon Oh, Lawrence Berkeley National Lab. (United States)
Patrick Naulleau, Lawrence Berkeley National Lab. (United States)
Published in SPIE Proceedings Vol. 10957:
Extreme Ultraviolet (EUV) Lithography X
Kenneth A. Goldberg, Editor(s)
© SPIE. Terms of Use
