Proceedings Paper
Overview and status of the 0.5NA EUV microfield exposure tool at Berkeley Lab| Format | Member Price | Non-Member Price |
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Paper Abstract
A 0.5-NA extreme ultraviolet micro-field exposure tool has been installed and commissioned at beamline 12.0.1.4 of the Advanced Light Source synchrotron facility at Lawrence Berkeley National Laboratory. Commissioning has demonstrated a patterning resolution of 13 nm half-pitch with annular 0.35 – 0.55 illumination; a patterning resolution of 8 nm half-pitch with annular 0.1 – 0.2 illumination; critical dimension (CD) uniformity of 0.7 nm 1σ on 16 nm nominal CD across 80% of the 200 um x 30 um aberration corrected field of view; aerial image vibration relative to the wafer of 0.75 nn RMS and focus control and focus stepping better than 15 nm.
Paper Details
Date Published: 26 March 2019
PDF: 8 pages
Proc. SPIE 10957, Extreme Ultraviolet (EUV) Lithography X, 1095708 (26 March 2019); doi: 10.1117/12.2516339
Published in SPIE Proceedings Vol. 10957:
Extreme Ultraviolet (EUV) Lithography X
Kenneth A. Goldberg, Editor(s)
PDF: 8 pages
Proc. SPIE 10957, Extreme Ultraviolet (EUV) Lithography X, 1095708 (26 March 2019); doi: 10.1117/12.2516339
Show Author Affiliations
Christopher Anderson, Lawrence Berkeley National Lab. (United States)
Arnaud Allezy, Lawrence Berkeley National Lab. (United States)
Weilun Chao, Lawrence Berkeley National Lab. (United States)
Carl Cork, Lawrence Berkeley National Lab. (United States)
Will Cork, Lawrence Berkeley National Lab. (United States)
Rene Delano, Lawrence Berkeley National Lab. (United States)
Jason DePonte, Lawrence Berkeley National Lab. (United States)
Michael Dickinson, Lawrence Berkeley National Lab. (United States)
Geoff Gaines, Lawrence Berkeley National Lab. (United States)
Jeff Gamsby, Lawrence Berkeley National Lab. (United States)
Arnaud Allezy, Lawrence Berkeley National Lab. (United States)
Weilun Chao, Lawrence Berkeley National Lab. (United States)
Carl Cork, Lawrence Berkeley National Lab. (United States)
Will Cork, Lawrence Berkeley National Lab. (United States)
Rene Delano, Lawrence Berkeley National Lab. (United States)
Jason DePonte, Lawrence Berkeley National Lab. (United States)
Michael Dickinson, Lawrence Berkeley National Lab. (United States)
Geoff Gaines, Lawrence Berkeley National Lab. (United States)
Jeff Gamsby, Lawrence Berkeley National Lab. (United States)
Eric Gullikson, Lawrence Berkeley National Lab. (United States)
Gideon Jones, Lawrence Berkeley National Lab. (United States)
Stephen Meyers, Inpria Corp. (United States)
Ryan Miyakawa, Lawrence Berkeley National Lab. (United States)
Patrick Naulleau, Lawrence Berkeley National Lab. (United States)
Senajith Rekawa, Lawrence Berkeley National Lab. (United States)
Farhad Salmassi, Lawrence Berkeley National Lab. (United States)
Brandon Vollmer, Lawrence Berkeley National Lab. (United States)
Daniel Zehm, Lawrence Berkeley National Lab. (United States)
Wenhua Zhu, Lawrence Berkeley National Lab. (United States)
Gideon Jones, Lawrence Berkeley National Lab. (United States)
Stephen Meyers, Inpria Corp. (United States)
Ryan Miyakawa, Lawrence Berkeley National Lab. (United States)
Patrick Naulleau, Lawrence Berkeley National Lab. (United States)
Senajith Rekawa, Lawrence Berkeley National Lab. (United States)
Farhad Salmassi, Lawrence Berkeley National Lab. (United States)
Brandon Vollmer, Lawrence Berkeley National Lab. (United States)
Daniel Zehm, Lawrence Berkeley National Lab. (United States)
Wenhua Zhu, Lawrence Berkeley National Lab. (United States)
Published in SPIE Proceedings Vol. 10957:
Extreme Ultraviolet (EUV) Lithography X
Kenneth A. Goldberg, Editor(s)
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