Share Email Print

Proceedings Paper

Progress in EUV resists towards high-NA EUV lithography
Author(s): Xiaolong Wang; Zuhal Tasdemir; Iacopo Mochi; Michaela Vockenhuber; Lidia van Lent-Protasova; Marieke Meeuwissen; Rolf Custers; Gijsbert Rispens; Rik Hoefnagels; Yasin Ekinci
Format Member Price Non-Member Price
PDF $17.00 $21.00

Paper Abstract

High-NA extreme ultraviolet lithography (EUVL) is going to deliver the high-volume manufacturing (HVM) patterning for sub-7 nm nodes for the semiconductor industry. One of the critical challenges is to develop suitable EUV resists at high resolution with high sensitivity and low line-edge roughness (LER). The resist performance is generally limited by the resolution-LER-sensitivity (RLS) tradeoff and it is critical to find new resists that have a performance beyond this tradeoff. EUV interference lithography (EUV-IL) is a powerful and efficient technique that can print high resolution: half pitch (HP) down to 6 nm nanostructures. In this work, we evaluate the performance of the EUV resists, including molecular resist, inorganic resist, chemically-amplified (CAR) and metal sensitizer chemically-amplified resist (Metal-CAR). Six resists with the best performance have been compared in dose-to-size, line-edge roughness, exposure latitude for half pitch 16 nm and 14 nm. The molecular resist A showed lowest dose to resolve HP 16 nm (35 mJ/cm2) and 14 nm (41 mJ/cm2) but with high line edge roughness (LER 3.5 nm). CAR resist C provided lowest LER 1.9 and 1.8 nm for HP 16 nm and HP 14 nm, respectively, but with higher doses 74 mJ/cm2 (HP 16 nm) and 69 mJ/cm2 (HP 14 nm). The inorganic resist showed comprehensive good performance, giving low LER of 2.1 nm with 50 mJ/cm2 and 42 mJ/cm2 for HP 16 nm and HP 14 nm, respectively. Using the simplified Z-factor model, we showed that the LER of the resists was improved over the last two years. As the inorganic resist could resolve HP 11 nm with dose 67 mJ/cm2, we conclude it to be the current best candidate to partially resolve the RLS tradeoff problem and could be the potential EUV resist for semiconductor technological node printing.

Paper Details

Date Published: 29 May 2019
PDF: 9 pages
Proc. SPIE 10957, Extreme Ultraviolet (EUV) Lithography X, 109570A (29 May 2019); doi: 10.1117/12.2516260
Show Author Affiliations
Xiaolong Wang, Paul Scherrer Institute (Switzerland)
Zuhal Tasdemir, Paul Scherrer Institute (Switzerland)
Iacopo Mochi, Paul Scherrer Institute (Switzerland)
Michaela Vockenhuber, Paul Scherrer Institute (Switzerland)
Lidia van Lent-Protasova, ASML Netherlands B.V. (Netherlands)
Marieke Meeuwissen, ASML Netherlands B.V. (Netherlands)
Rolf Custers, ASML Netherlands B.V. (Netherlands)
Gijsbert Rispens, ASML Netherlands B.V. (Netherlands)
Rik Hoefnagels, ASML Netherlands B.V. (Netherlands)
Yasin Ekinci, Paul Scherrer Institute (Switzerland)

Published in SPIE Proceedings Vol. 10957:
Extreme Ultraviolet (EUV) Lithography X
Kenneth A. Goldberg, Editor(s)

© SPIE. Terms of Use
Back to Top
Sign in to read the full article
Create a free SPIE account to get access to
premium articles and original research
Forgot your username?