Proceedings Paper
3D mask effects in high NA EUV imaging| Format | Member Price | Non-Member Price |
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Paper Abstract
Understanding, characterization and management of 3D mask effects, including non-telecentricity, contrast fading and best focus shifts, become increasingly important for the performance optimization of future extreme ultraviolet (EUV) projection systems and mask designs. Novel imaging configuration and central obscuration in high NA EUV projection systems introduce additional imaging effects. A simplified coherent imaging model, rigorous mask diffraction simulations, images for individual source areas and a hybrid mask model are employed to analyze the root causes of observed imaging artifacts. Based on this, several image enhancement strategies including modifications of mask and source are devised and investigated for lines/spaces.
Paper Details
Date Published: 26 March 2019
PDF: 13 pages
Proc. SPIE 10957, Extreme Ultraviolet (EUV) Lithography X, 109570Z (26 March 2019); doi: 10.1117/12.2515678
Published in SPIE Proceedings Vol. 10957:
Extreme Ultraviolet (EUV) Lithography X
Kenneth A. Goldberg, Editor(s)
PDF: 13 pages
Proc. SPIE 10957, Extreme Ultraviolet (EUV) Lithography X, 109570Z (26 March 2019); doi: 10.1117/12.2515678
Show Author Affiliations
Andreas Erdmann, Fraunhofer Institute for Integrated Systems and Decive Technology (Germany)
Peter Evanschitzky, Fraunhofer Institute for Integrated Systems and Decive Technology (Germany)
Gerardo Bottiglieri, ASML Netherlands B.V. (Netherlands)
Peter Evanschitzky, Fraunhofer Institute for Integrated Systems and Decive Technology (Germany)
Gerardo Bottiglieri, ASML Netherlands B.V. (Netherlands)
Eelco van Setten, ASML Netherlands B.V. (Netherlands)
Timon Fliervoet, ASML Netherlands B.V. (Netherlands)
Timon Fliervoet, ASML Netherlands B.V. (Netherlands)
Published in SPIE Proceedings Vol. 10957:
Extreme Ultraviolet (EUV) Lithography X
Kenneth A. Goldberg, Editor(s)
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