Selective deposition holds promise to simplify next-generation device fabrication and bring down economic cost. In this work, selectively depositing polymers on metal/dielectric patterns was achieved by spin dewetting, a phenomenon that refers to the dewetting of polymers during spin coating. Our strategy utilizes self-assembled monolayers (SAMs) to induce dewetting of polymers over some areas. Line patterns of Cu/SiO₂ were investigated. A hydrophobic SAM, octyltrichlorosilane (OTS, Cl₃Si–C₈H₁₇), was selectively formed on SiO₂ in the presence of Cu to render SiO₂ non-wettable. During a subsequent spin coating step, polymers dewet from OTS-functionalized SiO₂ and coat Cu exclusively. The spin dewetting process is strongly dictated by the spin coating kinetics. A systematic study of the processing conditions revealed strong dependence of polymer film coverage on spin speed, solution concentration, polymer molecular weight, casting solvent, and SAM hydrophobicity.

Date Published: 25 March 2019
PDF: 10 pages
Proc. SPIE 10960, Advances in Patterning Materials and Processes XXXVI, 109600Q (25 March 2019); doi: 10.1117/12.2515666

Published in SPIE Proceedings Vol. 10960:
Advances in Patterning Materials and Processes XXXVI
Roel Gronheid; Daniel P. Sanders, Editor(s)