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Proceedings Paper

Characterization of MBE-grown 1.55-µm GaSb-based multiple-quantum-well lasers at cryogenic temperatures
Author(s): Troy Hutchins-Delgado; Sami Adnan Nazib; Hosuk Lee; Diana Magana Contreras; Estania Jean Charles; Nathan J. Withers; Sadhvikas J. Addamane; Emma J. Renteria; John Nogan; Ganesh Balakrishnan; Marek Osiński
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Paper Abstract

GaSb-based multiple-quantum-well lasers with In0.2Ga0.8Sb wells, Al0.35Ga0.65Sb barriers, and Al0.9Ga0.1Sb claddings have been fabricated as broad-area Fabry-Perot devices of dimensions 1000 μm × 800 μm. Their current-voltage and light-current characteristics, as well as emission spectra have been measured over a wide temperature range from 280 K down to 20 K. These data have been analyzed for experimental information on carrier freeze out, gain changes related to temperature, temperature-dependence of series resistance, and prospects for high-performance lasers operating at cryogenic temperatures.

Paper Details

Date Published: 4 March 2019
PDF: 6 pages
Proc. SPIE 10912, Physics and Simulation of Optoelectronic Devices XXVII, 109120I (4 March 2019); doi: 10.1117/12.2515649
Show Author Affiliations
Troy Hutchins-Delgado, The Univ. of New Mexico (United States)
Sami Adnan Nazib, The Univ. of New Mexico (United States)
Hosuk Lee, The Univ. of New Mexico (United States)
Diana Magana Contreras, The Univ. of New Mexico (United States)
Estania Jean Charles, The Univ. of New Mexico (United States)
Nathan J. Withers, The Univ. of New Mexico (United States)
Sadhvikas J. Addamane, The Univ. of New Mexico (United States)
Emma J. Renteria, The Univ. of New Mexico (United States)
John Nogan, Sandia National Labs. (United States)
Ganesh Balakrishnan, The Univ. of New Mexico (United States)
Marek Osiński, The Univ. of New Mexico (United States)


Published in SPIE Proceedings Vol. 10912:
Physics and Simulation of Optoelectronic Devices XXVII
Bernd Witzigmann; Marek Osiński; Yasuhiko Arakawa, Editor(s)

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