Proceedings Paper
Wide-temperature-range characterization of 1.55-µm phosphorus-free multiple-quantum-well lasers grown by MBE on InP| Format | Member Price | Non-Member Price |
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Paper Abstract
Phosphorus-free multiple-quantum-well lasers with In0.53Ga0.47As wells, In0.53Al0.2Ga0.27As barriers, and In0.53Al0.47As claddings have been fabricated as Fabry-Perot devices of different lengths and widths. Their current-voltage and light-current characteristics have been measured over a wide temperature range from 200 K down to 20 K. These data have been analyzed for experimental information on carrier freeze out, gain changes related to temperature, temperature-dependence of series resistance, and prospects for high-performance lasers operating at cryogenic temperatures.
Paper Details
Date Published: 18 March 2019
PDF: 7 pages
Proc. SPIE 10912, Physics and Simulation of Optoelectronic Devices XXVII, 109120X (18 March 2019); doi: 10.1117/12.2515648
Published in SPIE Proceedings Vol. 10912:
Physics and Simulation of Optoelectronic Devices XXVII
Bernd Witzigmann; Marek Osiński; Yasuhiko Arakawa, Editor(s)
PDF: 7 pages
Proc. SPIE 10912, Physics and Simulation of Optoelectronic Devices XXVII, 109120X (18 March 2019); doi: 10.1117/12.2515648
Show Author Affiliations
Sami Adnan Nazib, The Univ. of New Mexico (United States)
Troy Hutchins-Delgado, The Univ. of New Mexico (United States)
Diana Magana Contreras, The Univ. of New Mexico (United States)
Hosuk Lee, The Univ. of New Mexico (United States)
Estania Jean Charles, The Univ. of New Mexico (United States)
Nathan J. Withers, The Univ. of New Mexico (United States)
Troy Hutchins-Delgado, The Univ. of New Mexico (United States)
Diana Magana Contreras, The Univ. of New Mexico (United States)
Hosuk Lee, The Univ. of New Mexico (United States)
Estania Jean Charles, The Univ. of New Mexico (United States)
Nathan J. Withers, The Univ. of New Mexico (United States)
Sadhvikas J. Addamane, The Univ. of New Mexico (United States)
Emma J. Renteria, The Univ. of New Mexico (United States)
John Nogan, Sandia National Labs. (United States)
Ganesh Balakrishnan, The Univ. of New Mexico (United States)
Marek Osiński, The Univ. of New Mexico (United States)
Emma J. Renteria, The Univ. of New Mexico (United States)
John Nogan, Sandia National Labs. (United States)
Ganesh Balakrishnan, The Univ. of New Mexico (United States)
Marek Osiński, The Univ. of New Mexico (United States)
Published in SPIE Proceedings Vol. 10912:
Physics and Simulation of Optoelectronic Devices XXVII
Bernd Witzigmann; Marek Osiński; Yasuhiko Arakawa, Editor(s)
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