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Proceedings Paper

Experimental investigation of a high-k reticle absorber system for EUV lithography
Author(s): Jo Finders; Robbert de Kruif; Frank Timmermans; Jara García Santaclara; Brid Connely; Markus Bender; Frank Schurack; Takahiro Onoue; Yohei Ikebe; Dave Farrar
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Paper Abstract

EUV lithography is entering High Volume Manufacturing at relative high Rayleigh factor k1 above 0.4. In comparison immersion lithography has been pushed to k1 values of 0.3 or below over the last two decades. One of the strong contributors determining the effective usable resolution is the mask absorber stack. The mask stack alters the diffraction by modifying the phase and intensity of the diffracted orders. In this paper we show the exposure results of a test mask having higher absorbance of EUV light and the advantages of reduced Mask 3D effects to imaging.

Paper Details

Date Published: 1 May 2019
PDF: 9 pages
Proc. SPIE 10957, Extreme Ultraviolet (EUV) Lithography X, 1095714 (1 May 2019); doi: 10.1117/12.2515496
Show Author Affiliations
Jo Finders, ASML Netherlands B.V. (Netherlands)
Robbert de Kruif, ASML Netherlands B.V. (Netherlands)
Frank Timmermans, ASML Netherlands B.V. (Netherlands)
Jara García Santaclara, ASML Netherlands B.V. (Netherlands)
Brid Connely, Toppan Photomasks, Inc. (Germany)
Markus Bender, Advanced Mask Technology Ctr. GmbH Co. KG (Germany)
Frank Schurack, Advanced Mask Technology Ctr. GmbH Co. KG (Germany)
Takahiro Onoue, HOYA Corp. (Japan)
Yohei Ikebe, HOYA Corp. (Japan)
Dave Farrar, HOYA Corp. (Japan)


Published in SPIE Proceedings Vol. 10957:
Extreme Ultraviolet (EUV) Lithography X
Kenneth A. Goldberg, Editor(s)

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