We have been fabricating nanoscale vacuum tubes for radiation immune electronics. Vacuum is superior to any semiconductor in terms of electron transport and we have combined the best of vacuum and silicon technology to fabricate surround gate nanoscale vacuum transistors on 8 " wafers with a channel dimension of 50 nm. These vacuum transistors, operating at a drive voltage of only 2 V, which is remarkable for vacuum devices, have the potential for THz electronics and several other applications. Exposure to gamma and protons does not impact the drive current or threshold voltage. This talk also will also discuss our printed electronics efforts for In Space Manufacturing which involves printing gas and biosensors, batteries and supercapacitors, and tribolectric power generators. The author acknowledges contributions from Jinwoo Han, Dongil Moon, Daniel Kim, Jessica Koehne, Myeonglok Seol, Sunjin Kim and Niki Werkheiser.

Date Published: 14 May 2019
PDF
Proc. SPIE 10982, Micro- and Nanotechnology Sensors, Systems, and Applications XI, 109820E (14 May 2019); doi: 10.1117/12.2515455

Published in SPIE Proceedings Vol. 10982:
Micro- and Nanotechnology Sensors, Systems, and Applications XI
Thomas George; M. Saif Islam, Editor(s)