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Proceedings Paper

Simulation of statistical effects in exposure and development of EUV photoresists using the percolation and diffusion limited aggregation model
Author(s): Akira Sasaki
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Paper Abstract

A simulation model to analyze exposure and development processes of EUV resists is presented. The model combines percolation model and diffusion limited aggregation (DLA) model to simulate dissolution of the resist molecules into developer, which has been exposed randomly by the EUV photons. We investigate the roughness of the pattern caused by the photon shot noise with the model as a function of line width and dose.

Paper Details

Date Published: 26 March 2019
PDF: 6 pages
Proc. SPIE 10957, Extreme Ultraviolet (EUV) Lithography X, 109571Q (26 March 2019); doi: 10.1117/12.2515434
Show Author Affiliations
Akira Sasaki, National Institutes for Quantum and Radiological Science and Technology (Japan)


Published in SPIE Proceedings Vol. 10957:
Extreme Ultraviolet (EUV) Lithography X
Kenneth A. Goldberg, Editor(s)

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