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Proceedings Paper

Overlay run-to-run control based on device structure measured overlay in DRAM HVM
Author(s): Hsiao Lun Chu; Foster Huang; Steven Tottewitz; Boris Habets; Patrick Lomtscher; Hsiao-Lin Hsu; Afu Chiu; Rex H. Liu
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Paper Abstract

In leading edge lithography, overlay is usually controlled by feedback based on measurements on overlay targets, which are located between the dies. These measurements are done directly after developing the wafer. However, it is well-known that the measurement on the overlay marks does not always represent the actual device overlay correctly. This can be due to different factors, including mask writing errors, target-to-device differences and non-litho processing effects, for instance by the etch process.1

In order to verify these differences, overlay measurements are regularly done after the final etch process. These post-etch overlay measurements can be performed by using the same overlay targets used in post-litho overlay measurement or other targets. Alternatively, they can be in-device measurements using electron beam measurement tools (for instance CD-SEM). The difference is calculated between the standard post-litho measurement and the post-etch measurement. The calculation result is known as litho-etch overlay bias.

This study focuses on the feasibility of post-etch overlay measurement run-to-run (R2R) feedback instead of post-lithography R2R feedback correction. It is known that the post-litho processes have strong non-linear influences on the in-device overlay signature and, hence, on the final overlay budget. A post-etch based R2R correction is able to mitigate such influences.2

This paper addresses several questions and challenges related to post-etch overlay measurement with respect to R2R feedback control. The behavior of the overlay targets in the scribe-line is compared to the overlay behavior of device structures. The influence of different measurement methodologies (optical image-based overlay vs. electron microscope overlay measurement) was evaluated. Scribe-line standard overlay targets will be measured with electron microscope measurement. In addition, the influence of the intra-field location of the targets on device-to-target shifts was evaluated.

Paper Details

Date Published: 26 March 2019
PDF: 15 pages
Proc. SPIE 10959, Metrology, Inspection, and Process Control for Microlithography XXXIII, 109592P (26 March 2019); doi: 10.1117/12.2515203
Show Author Affiliations
Hsiao Lun Chu, Nanya Technology Corp. (Taiwan)
Foster Huang, Nanya Technology Corp. (Taiwan)
Steven Tottewitz, Qoniac GmbH (Germany)
Boris Habets, Qoniac GmbH (Germany)
Patrick Lomtscher, Qoniac GmbH (Germany)
Hsiao-Lin Hsu, Qoniac Taiwan Ltd. (Taiwan)
Afu Chiu, Qoniac Taiwan Ltd. (Taiwan)
Rex H. Liu, Qoniac Taiwan Ltd. (Taiwan)

Published in SPIE Proceedings Vol. 10959:
Metrology, Inspection, and Process Control for Microlithography XXXIII
Vladimir A. Ukraintsev; Ofer Adan, Editor(s)

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