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Proceedings Paper

PSCAR optimization to reduce EUV resist roughness with sensitization using Resist Formulation Optimizer (RFO)
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Paper Abstract

Resist Formulation Optimizer (RFO) is created to optimize resist formulation under EUV stochastic effects. Photosensitized Chemically Amplified ResistTM (PSCARTM) 2.0 reaction steps are included in the resist reaction model in RFO in addition to standard Chemically Amplified Resists (CAR) reaction steps. A simplified resist roughness calculation method is introduced in RFO. RFO uses “fast stochastic resist model” which uses continuous model information for stochastic calculation. “Resist component’s dissolution inhibition model” is also introduced for better prediction of different resist formulations in RFO. The resist component’s dissolution inhibition model is used for calculation of both Dissolution Inhibition Slope (DIS) and Dissolution Inhibition Deviation (DID). By dividing DID by DIS at a pattern edge, Line Edge Roughness (LER) can be predicted. The RFO performance is validated to give low residual errors after calibration even for different resist formulations. RFO is designed to optimize the resist formulation to minimize resist roughness as a cost function with keeping target CD. RFO suggests that PSCAR 2.0 with Polarity Switching photosensitizer precursor (POLAS) in combination with photosensitizer (PS) image enhancement may provide reduced resist roughness. Simulations using a calibrated rigorous stochastic resist model for S-Litho show a good prediction of PSCAR 2.0 process performance.

Paper Details

Date Published: 8 April 2019
PDF: 15 pages
Proc. SPIE 10960, Advances in Patterning Materials and Processes XXXVI, 109600A (8 April 2019); doi: 10.1117/12.2515187
Show Author Affiliations
Seiji Nagahara, Tokyo Electron Ltd. (Japan)
Cong Que Dinh, Tokyo Electron Kyushu Ltd. (Japan)
Gosuke Shiraishi, Tokyo Electron Kyushu Ltd. (Japan)
Yuya Kamei, Tokyo Electron Kyushu Ltd. (Belgium)
Kathleen Nafus, Tokyo Electron America, Inc. (Belgium)
Yoshihiro Kondo, Tokyo Electron Kyushu Ltd. (Japan)
Michael Carcasi, Tokyo Electron America, Inc. (United States)
Yukie Minekawa, Tokyo Electron Kyushu Ltd. (Japan)
Hiroyuki Ide, Tokyo Electron Kyushu Ltd. (Japan)
Yuichi Yoshida, Tokyo Electron Kyushu Ltd. (Japan)
Kosuke Yoshihara, Tokyo Electron Kyushu Ltd. (Japan)
Ryo Shimada, Tokyo Electron Kyushu Ltd. (Japan)
Masaru Tomono, Tokyo Electron Kyushu Ltd. (Japan)
Kazuhiro Takeshita, Tokyo Electron Kyushu Ltd. (Japan)
Serge Biesemans, Tokyo Electron Europe Ltd. (Belgium)
Hideo Nakashima, Tokyo Electron Ltd. (Japan)
Danilo De Simone, IMEC (Belgium)
John S. Petersen, IMEC (Belgium)
Philippe Foubert, IMEC (Belgium)
Peter De Bisschop, IMEC (Belgium)
Geert Vandenberghe, IMEC (Belgium)
Hans-Jürgen Stock, Synopsys GmbH (Germany)
Balint Meliorisz, Synopsys GmbH (Germany)

Published in SPIE Proceedings Vol. 10960:
Advances in Patterning Materials and Processes XXXVI
Roel Gronheid; Daniel P. Sanders, Editor(s)

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