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Proceedings Paper

Localized power spectral density analysis on atomic force microscopy images for advanced patterning applications
Author(s): Alain Moussa; Mohamed Saib; Sara Paolillo; Frederic Lazzarino; Andrea Illiberi; Shaoren Deng; Jan Willem Maes; Anne-Laure Charley; Philippe Leray
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Paper Abstract

Power Spectral Density (PSD) is now a standard analysis for pattern roughness process control in advanced patterning. Due to PSD analysis sensitivity coupled with Scanning Electron Microscopy (SEM), line edge roughness (LER) and line width roughness (LWR) are more understood. However, this is applied on sides of the line, and has limited information about roughness on top of the pattern. On the other hand, Atomic force microscopy (AFM) measure accurately the topography of pattern and even if this metrology is probe size dependent, the top of the patterned lines is well revealed when trenches are too narrow to be measured. In this work, we have adapted and applied the PSD analysis on patterned lines measured by AFM. Specific algorithm has been developed to localize the analysis on top of the line. This allow us to report on the effect of processes, such EUV resist smoothening and Area Selective Deposition (ASD).

Paper Details

Date Published: 26 March 2019
PDF: 8 pages
Proc. SPIE 10959, Metrology, Inspection, and Process Control for Microlithography XXXIII, 109591O (26 March 2019); doi: 10.1117/12.2515178
Show Author Affiliations
Alain Moussa, IMEC (Belgium)
Mohamed Saib, IMEC (Belgium)
Sara Paolillo, IMEC (Belgium)
Frederic Lazzarino, IMEC (Belgium)
Andrea Illiberi, ASM Belgium N.V. (Belgium)
Shaoren Deng, ASM Belgium N.V. (Belgium)
Jan Willem Maes, ASM Belgium N.V. (Belgium)
Anne-Laure Charley, IMEC (Belgium)
Philippe Leray, IMEC (Belgium)


Published in SPIE Proceedings Vol. 10959:
Metrology, Inspection, and Process Control for Microlithography XXXIII
Vladimir A. Ukraintsev; Ofer Adan, Editor(s)

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