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Proceedings Paper

Absorber and phase defect inspection on EUV reticles using RESCAN
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Paper Abstract

Reliable photomask metrology is required to reduce the risk of yield loss in the semiconductor manufacturing process. Actinic pattern inspection (API) of EUV reticles is a challenging problem to tackle with a conventional approach. For this reason we developed an API platform based on coherent diffraction imaging. Aim: We want to verify the sensitivity of our platform to absorber and phase defects. Approach: We designed and manufactured two EUV mask samples with absorber and phase defects and we inspected them with RESCAN in die-to-database mode. Results: We reconstructed an image of an array of programmed absorber defects and we created a defect map of our sample. We inspected two programmed phase defect samples with buried structures of 3.5 nm and 7.8 nm height. Conclusions: We verified that RESCAN in its current configuration can detect absorber defects in random patterns and buried (phase) defects down to 50 × 50 nm2.

Paper Details

Date Published: 26 March 2019
PDF: 8 pages
Proc. SPIE 10957, Extreme Ultraviolet (EUV) Lithography X, 109570W (26 March 2019); doi: 10.1117/12.2515160
Show Author Affiliations
Iacopo Mochi, Paul Scherrer Institute (Switzerland)
Sara Fernandez, Paul Scherrer Institute (Switzerland)
Ricarda Nebling, Paul Scherrer Institute (Switzerland)
Uldis Locans, Paul Scherrer Institute (Switzerland)
Patrick Helfenstein, Paul Scherrer Institute (Switzerland)
Rajendran Rajeev, Paul Scherrer Institute (Switzerland)
Atoosa Dejkameh, Paul Scherrer Institute (Switzerland)
Dimitrios Kazazis, Paul Scherrer Institute (Switzerland)
Li-Ting Tseng, Paul Scherrer Institute (Switzerland)
Yasin Ekinci, Paul Scherrer Institute (Switzerland)

Published in SPIE Proceedings Vol. 10957:
Extreme Ultraviolet (EUV) Lithography X
Kenneth A. Goldberg, Editor(s)

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