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Proceedings Paper

Metal organic cluster photoresists: new metal oxide systems
Author(s): Kazunori Sakai; Seok-Heon Jung; Wenyang Pan; Emmanuel P. Giannelis; Christopher K. Ober
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Paper Abstract

Extreme ultraviolet (EUV) lithography, using 13.5 nm radiation, is a prominent candidate for next generation manufacturing. Our main effort has recently focused on metal organic cluster photoresists, including both Zr and Hf metal oxides, both relatively low EUV absorbing metals. However, integration of high EUV absorption elements is now considered to be a more promising route to further improve lithographic performance under EUV radiation. Here, we report lithography of zinc oxide-based metal organic cluster photoresists, and EUV patterning below 15 nm. The lithographic performance of this and other metal oxides is described and etch characteristics discussed.

Paper Details

Date Published: 20 March 2019
PDF: 6 pages
Proc. SPIE 10963, Advanced Etch Technology for Nanopatterning VIII, 1096306 (20 March 2019); doi: 10.1117/12.2515148
Show Author Affiliations
Kazunori Sakai, Cornell Univ. (United States)
JSR Engineering Co., Ltd. (Japan)
Seok-Heon Jung, Cornell Univ. (United States)
Wenyang Pan, Cornell Univ. (United States)
Emmanuel P. Giannelis, Cornell Univ. (United States)
Christopher K. Ober, Cornell Univ. (United States)

Published in SPIE Proceedings Vol. 10963:
Advanced Etch Technology for Nanopatterning VIII
Richard S. Wise; Catherine B. Labelle, Editor(s)

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