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Proceedings Paper

OPC strategies to reduce failure rates with rigorous resist model stochastic simulations in EUVL
Author(s): Alessandro Vaglio Pret; Trey Graves; David Blankenship; Stewart A. Robertson; Patrick Lee; John J. Biafore
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Paper Abstract

Stochastic effects are the ultimate limiters of optical lithography and are a major concern for next-generation technology nodes. In previous work, we compared the performance of several types of EUV resists on dense patterns or brightfield mask SRAM cells across technology nodes. It was shown that due to low photon/chemical shot noise and reduced blur, metal-oxide resists could potentially reduce lithography failures at the 5nm technology node though even at 7nm technology node failures may be noticeable if process variations are considered. Following up on work published the last three years, in this paper we study how different OPC strategies and photoresist properties might affect failure rates for a darkfield mask SRAM cell at the 5nm technology node. Four cases are considered: • Aerial image optimization by mask biasing; stochastic simulations are performed with an organic chemically amplified resist model. • Aerial image optimization by model-based OPC; stochastic simulations are performed with an organic chemically amplified and a metal-oxide resist model. • Aerial image model-based OPC enhanced by rigorous stochastic modeling; stochastic simulations are performed with an organic chemically amplified resist model. In all cases, a numerical aperture of 0.33 is used. Process windows are generated averaging ~2150 (3.5σ) stochastic simulations for each focus-dose combination, while best focus-dose target CDs are found by analyzing failure rates across focus and dose. Roughly 1.8 million (5σ) trials are then run at best condition for all cases to quantify part per million failures.

Paper Details

Date Published: 26 March 2019
PDF: 9 pages
Proc. SPIE 10957, Extreme Ultraviolet (EUV) Lithography X, 109570J (26 March 2019); doi: 10.1117/12.2515124
Show Author Affiliations
Alessandro Vaglio Pret, KLA Corp. (United States)
Trey Graves, KLA Corp. (United States)
David Blankenship, KLA Corp. (United States)
Stewart A. Robertson, KLA Corp. (United States)
Patrick Lee, KLA Corp. (United States)
John J. Biafore, KLA Corp. (United States)

Published in SPIE Proceedings Vol. 10957:
Extreme Ultraviolet (EUV) Lithography X
Kenneth A. Goldberg, Editor(s)

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