ArF lithography is the primary technique used in leading edge semiconductor fabrication. However, as lithographers attempt to create manufacturable processes for N7 and future nodes, they are challenged to achieve improvements in cost of ownership and productivity. One means to reduce cost of ownership is to reduce photolithography layers, which can be achieved with EUV lithography. Chemical manufacturers are struggling to solve stochastic issues that evolve with the use of EUV lithography, as well as develop the many complementary materials required to enable the technology. Conventional filters such as Nylon and UPE (ultra-high molecular weight polyethylene) have been used in manufacture of photochemicals and new filtration technologies must be developed to innovate along with chemical suppliers.

Entegris has recently developed several innovative membranes: a next generation UPE and Oktolex^TM. The next generation UPE overcomes the trade-off between flow rate and pore size, while also being compatible with a range of chemistries. Oktolex^TM selectively removes defects based on tailored membrane modification technology, further addressing defect sources that come from newly formulated chemistries.

In this paper, these innovative technologies are introduced to address the challenges of advanced photoresist defectivity by enhancing filtration performance. Results and possible mechanisms of defect reduction will be discussed.

Date Published: 25 March 2019
PDF: 6 pages
Proc. SPIE 10960, Advances in Patterning Materials and Processes XXXVI, 109601X (25 March 2019); doi: 10.1117/12.2514974

Published in SPIE Proceedings Vol. 10960:
Advances in Patterning Materials and Processes XXXVI
Roel Gronheid; Daniel P. Sanders, Editor(s)