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Advanced particle contamination control in EUV scanners
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Paper Abstract

With the introduction of the NXE:3400B scanner, ASML has brought EUV to High-Volume Manufacturing (HVM). In this context, ASML is pursuing a dual-path approach towards zero reticle defectivity: EUV-compatible pellicle or zero particles towards reticle by advanced particle contamination control. This paper will focus on the latter approach of advanced particle contamination control and will show that we are able to reduce particle contamination towards reticle to a level that is compatible with HVM requirements for sub-10nm node lithography.

Paper Details

Date Published: 26 March 2019
PDF: 13 pages
Proc. SPIE 10957, Extreme Ultraviolet (EUV) Lithography X, 109570U (26 March 2019); doi: 10.1117/12.2514874
Show Author Affiliations
Mark van de Kerkhof, ASML Netherlands B.V. (Netherlands)
Tjarko van Empel, ASML Netherlands B.V. (Netherlands)
Michael Lercel, ASML Netherlands B.V. (Netherlands)
Christophe Smeets, ASML Netherlands B.V. (Netherlands)
Ferdi van de Wetering, ASML Netherlands B.V. (Netherlands)
Andrey Nikipelov, ASML Netherlands B.V. (Netherlands)
Christian Cloin, ASML Netherlands B.V. (Netherlands)
Andrei Yakunin, ASML Netherlands B.V. (Netherlands)
Vadim Banine, ASML Netherlands B.V. (Netherlands)

Published in SPIE Proceedings Vol. 10957:
Extreme Ultraviolet (EUV) Lithography X
Kenneth A. Goldberg, Editor(s)

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