
Proceedings Paper
Micro-phase separation behavior study of the same system of a novel block copolymer (PS-b-PC)Format | Member Price | Non-Member Price |
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Paper Abstract
A novel high-χ block copolymer polystyrene-b-polycarbonate (PS-b-PC) of the same system with three samples (1, 2, 3) which contain an active -NH- group on the polymer backbone between the PS block and the PC block have been successfully synthesized. It is believed that the hydrogen bond between -NH- and Si-OH (silanol) plays a dominant role which is as a real driving force to promote vertical micro-phase separation under the neutral layer free condition. The periods in which the samples 1, 2 and 3 form a vertical layer micro-phase separation are 10.6, 11.2 and 12.3nm, respectively. Though experiments, the best micro-phase separation process conditions were found (annealing temperature 160-165°C; annealing time 10 min) and the relevant parameters of PS-b-PC are also given. The results show that sample 2 of high-χ (0.19) has better phase separation performance, lower line-edge roughness (LER) and line width roughness (LWR) than the other two samples. These diblock copolymer samples successfully achieved the directed self-assembly (DSA) of PS-b-PC under the condition that the designed silicon substrate groove did not need any neutral layer. Compared with the previously reported methods to orientation control BCPs with χ value and small vertical micro-phase separation while short-term thermal treatment demonstrates PS-b-PC as a rare and valuable candidate for advancing the field of nanolithography. This work will provide extremely important theories, valuable information and insights that apply to nanowire patterning by DSA in state-of-the-art semi-conduction devices.
Paper Details
Date Published: 25 March 2019
PDF: 13 pages
Proc. SPIE 10960, Advances in Patterning Materials and Processes XXXVI, 109601G (25 March 2019); doi: 10.1117/12.2514673
Published in SPIE Proceedings Vol. 10960:
Advances in Patterning Materials and Processes XXXVI
Roel Gronheid; Daniel P. Sanders, Editor(s)
PDF: 13 pages
Proc. SPIE 10960, Advances in Patterning Materials and Processes XXXVI, 109601G (25 March 2019); doi: 10.1117/12.2514673
Show Author Affiliations
Baolin Zhang, Guizhou Univ. (China)
Institute of Microelectronics (China)
Weichen Liu, Institute of Microelectronics (China)
Institute of Microelectronics (China)
Weichen Liu, Institute of Microelectronics (China)
Zhengping Zhang, Guizhou Univ. (China)
Lingkuan Meng, Integrated Circuit Materials & Components Industry Technology Innovative Alliance (China)
Chengdu Technological Univ. (China)
Lingkuan Meng, Integrated Circuit Materials & Components Industry Technology Innovative Alliance (China)
Chengdu Technological Univ. (China)
Published in SPIE Proceedings Vol. 10960:
Advances in Patterning Materials and Processes XXXVI
Roel Gronheid; Daniel P. Sanders, Editor(s)
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