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Proceedings Paper

Insights into the intrinsic recombination limit of silicon devices (Conference Presentation)
Author(s): Mariana I. Bertoni

Paper Abstract

High-efficiency solar cell devices characterized by extremely high open-circuit voltage (VOC) values have shown that the traditional constraints imposed by extrinsic recombination processes will be eventually surpassed at some time in the foreseeable future. The accurate evaluation of Auger lifetime and its temperature-dependence are thus fundamental not only for the correct interpretation of effective carrier lifetime data, but also for the simulation of device performance, especially when these are deployed in the field, where the operating conditions can greatly vary from the standard testing conditions. In this work, we present the Auger lifetime across a range of temperatures from 300 to 500 K and a range of injection level from 5 x 1014 to 1 x 1016 cm-3 showing that, in stark opposition with what generally accepted, a strong increment of the lifetime values happens at high temperatures. Based on these results, we discuss the ambipolar Auger coefficient in the high injection range and propose a parameterization for its temperature dependence in agreement with a model previously presented in literature. Finally, we evaluate the intrinsic-limited implied voltage (iV) within the same range of injection level and temperature, and show that the evaluated strong increment of Auger lifetime counteracts the typical drop of high-efficiency solar cells performance with high temperature.

Paper Details

Date Published: 8 March 2019
Proc. SPIE 10913, Physics, Simulation, and Photonic Engineering of Photovoltaic Devices VIII, 109130S (8 March 2019); doi: 10.1117/12.2514126
Show Author Affiliations
Mariana I. Bertoni, Arizona State Univ. (United States)

Published in SPIE Proceedings Vol. 10913:
Physics, Simulation, and Photonic Engineering of Photovoltaic Devices VIII
Alexandre Freundlich; Laurent Lombez; Masakazu Sugiyama, Editor(s)

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