
Proceedings Paper
High-power LPP-EUV source with long collector mirror lifetime for semiconductor high-volume manufacturingFormat | Member Price | Non-Member Price |
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Paper Abstract
We have been developing CO2-Sn-LPP EUV light source which is the most promising solution as the 13.5nm high power light source for HVM EUVL. Unique and original technologies such as; combination of pulsed CO2 laser and Sn droplets, dual wavelength laser pulses shooting and mitigation with magnetic field have been developed in Gigaphoton Inc.. We have developed first practical source for HVM; “GL200E” 1) in 2014. We have proved high average power CO2 laser more than 20kW at output power cooperate with Mitsubishi electric cooperation2). Pilot#1 is up running and its demonstrates HVM capability; EUV power recorded at111W average (117W in burst stabilized, 95% duty) with 5% conversion efficiency for 22hours operation in October 20163). Availability is potentially achievable at 89% (2weeks average), also superior magnetic mitigation has demonstrated promising mirror degradation rate (= 0.5%/Gp) above 100W level operation with dummy mirror test.4).
Recently we have demonstrated actual collector mirror reflectivity degradation rate is less than -0.4%/Gp by using real collector mirror around 100W ( at I/F clean ) in burst power during 30 Billion pulses operation. We will report latest data 125W average operation with actual collector mirror at conference.
Reference
1) Hakaru Mizoguchi, et. al.: “Sub-hundred Watt operation demonstration of HVM LPP-EUV source”, Proc. SPIE 9048, (2014)
2) Yoichi Tanino et.al.:” A Driver CO2 Laser Using Transverse-flow CO2 Laser Amplifiers”, EUV Symposium 2013, ( Oct.6-10.2013, Toyama)
3) Hakaru Mizoguchi et al.:” Performance of 250W High Power HVM LPP-EUV Source”, Proc. SPIE 10143, Extreme Ultraviolet (EUV) Lithography VIII (2017)
4) Hakaru Mizoguchi, et al: ” High Power HVM LPP-EUV Source with Long Collector Mirror Lifetime”, EUVL Workshop 2017, (Berkley, 12-15, June, 2017)
Paper Details
Date Published: 6 June 2019
PDF: 12 pages
Proc. SPIE 10957, Extreme Ultraviolet (EUV) Lithography X, 1095716 (6 June 2019); doi: 10.1117/12.2514033
Published in SPIE Proceedings Vol. 10957:
Extreme Ultraviolet (EUV) Lithography X
Kenneth A. Goldberg, Editor(s)
PDF: 12 pages
Proc. SPIE 10957, Extreme Ultraviolet (EUV) Lithography X, 1095716 (6 June 2019); doi: 10.1117/12.2514033
Show Author Affiliations
Hakaru Mizoguchi, Gigaphoton Inc. (Japan)
Hiroaki Nakarai, Gigaphoton Inc. (Japan)
Tamotsu Abe, Gigaphoton Inc. (Japan)
Yasufumi Kawasuji, Gigaphoton Inc. (Japan)
Hiroshi Tanaka, Gigaphoton Inc. (Japan)
Yukio Watanabe, Gigaphoton Inc. (Japan)
Tsukasa Hori, Gigaphoton Inc. (Japan)
Hiroaki Nakarai, Gigaphoton Inc. (Japan)
Tamotsu Abe, Gigaphoton Inc. (Japan)
Yasufumi Kawasuji, Gigaphoton Inc. (Japan)
Hiroshi Tanaka, Gigaphoton Inc. (Japan)
Yukio Watanabe, Gigaphoton Inc. (Japan)
Tsukasa Hori, Gigaphoton Inc. (Japan)
Takeshi Kodama, Gigaphoton Inc. (Japan)
Yutaka Shiraishi, Gigaphoton Inc. (Japan)
Tatsuya Yanagida, Gigaphoton Inc. (Japan)
Georg Soumagne, Gigaphoton Inc. (Japan)
Tsuyoshi Yamada, Gigaphoton Inc. (Japan)
Taku Yamazaki, Gigaphoton Inc. (Japan)
Takashi Saitou, Gigaphoton Inc. (Japan)
Yutaka Shiraishi, Gigaphoton Inc. (Japan)
Tatsuya Yanagida, Gigaphoton Inc. (Japan)
Georg Soumagne, Gigaphoton Inc. (Japan)
Tsuyoshi Yamada, Gigaphoton Inc. (Japan)
Taku Yamazaki, Gigaphoton Inc. (Japan)
Takashi Saitou, Gigaphoton Inc. (Japan)
Published in SPIE Proceedings Vol. 10957:
Extreme Ultraviolet (EUV) Lithography X
Kenneth A. Goldberg, Editor(s)
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