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Proceedings Paper

Realization of periodic InAs QDs by in-situ four-beam laser-interference irradiation on the wetting layer
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Paper Abstract

In this paper, during InAs/GaAs (001) quantum dot molecular beam epitaxy growth, four-beam pulsed laser-interference was used to in-situ irradiate on the wetting layer with an InAs coverage of 1.1 monolayer. Significant atomic layer removal and periodic nanostructures including nanoholes and nanoislands were obtained. These periodic nanostructures had a significant influence on quantum dot growth. Especially for the structure of nano-island, quantum dots preferentially nucleated at the edges of them. When the nano-island size becomes small enough, ordered quantum dot arrays are directly achieved on smooth GaAs surface with a follow-up InAs deposition accompanied by the disappearance of the nanoislands. This finding provides a potential technique leading to site-controlled and defect-free quantum dot fabrication.

Paper Details

Date Published: 5 November 2018
PDF: 7 pages
Proc. SPIE 10814, Optoelectronic Devices and Integration VII, 108141M (5 November 2018); doi: 10.1117/12.2513815
Show Author Affiliations
Linyun Yang, Soochow Univ. (China)
Xinning Yang, Soochow Univ. (China)
Lili Miao, Soochow Univ. (China)
Wei Zhang, Suzhou Institute of Nano-Tech and Nano-Bionics (China)
Dayun Huo, Mechanical and Electrical Products, and Vehicle Testing Ctr. of Jiangsu Entry-Exit Inspection and Quarantine Bureau (China)
Zhenwu Shi, Soochow Univ. (China)
Changsi Peng, Soochow Univ. (China)
Univ. of Bedfordshire (United Kingdom)

Published in SPIE Proceedings Vol. 10814:
Optoelectronic Devices and Integration VII
Xuping Zhang; Baojun Li; Changyuan Yu; Xinliang Zhang, Editor(s)

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