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Proceedings Paper

Micromachine scanning tunneling microscope for nanoscale characterization and fabrication
Author(s): Yasuo Wada; M. Lutwyche; M. Ishibashi
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Paper Abstract

Silicon ultra-large-scale integrated circuit (ULSI) technology has experienced an extremely rapid progress for more than 25 years, however, several physical, chemical and technological limitations are foreseen against further scaling beyond the 0.1 micrometers technology level. This paper describes the several key issues towards the possible advancement of nanoscale ULSIs by nanotechnology, especially scanning tunneling microscope (STM). The key factor is the speed or throughput when STM is applied to the fabrication and characterization of ULSIs. Therefore, parallel operation should be indispensable to accomplish the appropriate throughput, which would only be achieved by micromachine STM. Possible application of micromachine STM to characterization and fabrication is described, such as advanced lithography system below 0.1 micrometers technology level.

Paper Details

Date Published: 23 September 1996
PDF: 5 pages
Proc. SPIE 2879, Micromachining and Microfabrication Process Technology II, (23 September 1996); doi: 10.1117/12.251231
Show Author Affiliations
Yasuo Wada, Hitachi, Ltd. (Japan)
M. Lutwyche, Hitachi, Ltd. (Japan)
M. Ishibashi, Hitachi, Ltd. (Japan)

Published in SPIE Proceedings Vol. 2879:
Micromachining and Microfabrication Process Technology II
Stella W. Pang; Shih-Chia Chang, Editor(s)

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