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Proceedings Paper

Gas flow simulation research on reaction chamber of reactive ion etching
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Paper Abstract

Gas flow distribution of reaction chamber of reactive ion etching (RIE) etcher is usually considered to be a main factor in determining both the plasma distribution and etching uniformity. Based on the continuum fluid and heat transfer models of the commercial software, Fluent(Ansys), the gas flow distribution of the reaction chamber was simulated. And then the spatial distribution profiles of the pressures above the electrode surface under the different mass flow (50~250sccm) inlet conditions , and the influence of the different GAP (L = 0.03~0.06m) of the chambers on the gas flow uniformity were discussed. The result shows that the pressure distribution above the electrode has the character which the pressure is higher in the center of the electrode and lower at the edge and increases with the rise of the mass flow of inlet. And the uniformity of the gas flow distribution is enhanced with the rise of the GAP of the chamber.

Paper Details

Date Published: 30 January 2019
PDF: 7 pages
Proc. SPIE 10841, 9th International Symposium on Advanced Optical Manufacturing and Testing Technologies: Meta-Surface-Wave and Planar Optics, 108410G (30 January 2019); doi: 10.1117/12.2512222
Show Author Affiliations
Jingwen Zhang, Institute of Optics and Electronics (China)
Univ. of Electronic Science and Technology of China (China)
Univ. of Chinese Academy of Sciences (China)
Fan Bin, Institute of Optics and Electronics (China)
Zhiwei Li, Institute of Optics and Electronics (China)
Xin Liu, Institute of Optics and Electronics (China)
Bincheng Li, Univ. of Electronic Science and Technology of China (China)
Han Yu, Institute of Optics and Electronics (China)
Gong Chang, Institute of Optics and Electronics (China)
Lanzhou Univ. of Technology (China)


Published in SPIE Proceedings Vol. 10841:
9th International Symposium on Advanced Optical Manufacturing and Testing Technologies: Meta-Surface-Wave and Planar Optics
Mingbo Pu; Xiaoliang Ma; Xiong Li; Minghui Hong; Changtao Wang; Xiangang Luo, Editor(s)

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