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Proceedings Paper

Test structures for nondestructive in-situ control of the anodic bonding quality
Author(s): Jose Antonio Plaza; Jaume Esteve; Emilio Lora-Tamayo
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Paper Abstract

A simple anodic bonding test is presented. This test can be used to study the anodic bonding process or used to control the quality of processed wafers. The test consists of simple test structures that have been fabricated on the silicon wafer. In this way, small cavities with different dimension are defined by a single RIE process. The anodic bonding occurs as a consequence of the high level of electrostatic pressure applied during the process. The electrostatic pressure pulls the two surfaces of the cavity into intimate contact. Depending on the stiffness of the cavities, determined by their dimensions, they will be bonded or not. The bonding process and quality can be monitored by the measurement of the size of the smallest bonded cavity and the distance between the bonded area and the border of the cavity. The test has been validated by the study of the influence of the depth of the cavities and the influence of the geometry of the glass electrode. The test presented gives more information about the anodic bonding process than the other characterization techniques. Moreover, this electrostatic test is non-destructive, it is very easy to implement on processed wafers and no special set-up is needed for measurements. The new electrostatic anodic bonding test is very promising as a simple method to increase knowledge of the phenomena.

Paper Details

Date Published: 23 September 1996
PDF: 9 pages
Proc. SPIE 2879, Micromachining and Microfabrication Process Technology II, (23 September 1996); doi: 10.1117/12.251216
Show Author Affiliations
Jose Antonio Plaza, Ctr. Nacional de Microelectronica/CSIC (Spain)
Jaume Esteve, Ctr. Nacional de Microelectronica/CSIC (Spain)
Emilio Lora-Tamayo, Ctr. Nacional de Microelectronica/CSIC (Spain)

Published in SPIE Proceedings Vol. 2879:
Micromachining and Microfabrication Process Technology II
Stella W. Pang; Shih-Chia Chang, Editor(s)

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