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Proceedings Paper

InAs 1.3um quantum-dot lasers on germanium (Conference Presentation)
Author(s): Fuwan Gan; Qian Gong; Jinyi Yan; Chunfang Cao; Xuyi Zhao; Hailong Wang

Paper Abstract

Silicon photonics attracted much attention in past decades, but it is challenging for silicon laser source because of its indirect bandgap. The long-wavelength InAs/GaAs quantum dot (QD) laser monolithically grown on Ge substrate has been reported. Promising performance was reported by solid source molecular beam epitaxy (MBE). In this paper, gas source MBE was tried for the growth of InAs QD lasers on Ge. InAs QD laser is demonstrated in continuous wave mode at room temperature, with wavelengths covering 1.0-1.3 microns. The lowest threshold current density was obtained as 48 A/cm2 with an output power of several tens of mW.

Paper Details

Date Published: 4 March 2019
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Proc. SPIE 10922, Smart Photonic and Optoelectronic Integrated Circuits XXI, 1092214 (4 March 2019); doi: 10.1117/12.2512080
Show Author Affiliations
Fuwan Gan, Shanghai Institute of Microsystem and Information Technology (China)
Silux Technology Co., Ltd. (China)
Qian Gong, Shanghai Institute of Microsystem and Information Technology (China)
Jinyi Yan, Shanghai Institute of Microsystem and Information Technology (China)
Chunfang Cao, Shanghai Institute of Microsystem and Information Technology (China)
Xuyi Zhao, Shanghai Institute of Microsystem and Information Technology (China)
Hailong Wang, Qufu Normal Univ. (China)


Published in SPIE Proceedings Vol. 10922:
Smart Photonic and Optoelectronic Integrated Circuits XXI
Sailing He; El-Hang Lee, Editor(s)

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