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Proceedings Paper

Polysilicon microswitch for planar antenna phase shifters
Author(s): Sandrine Lucas; King Kis-Sion; Jacques Pinel; Olivier Bonnaud
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Paper Abstract

This study is based on the future realization of phase shifters for planar antennas. Phase shifters include Poly-Si microswitches taking the place of usual PIN diodes. The microswitch consists of a cantilever beam, a contact electrode and a control one. For the time being, undoped polysilicon cantilevers are produced on monosilicon substrate by surface micromachining in order to test the feasability of the process. The latter comprises a silicon dioxide sacrificial layer elaborated with magnetron rf sputtering, a LPCVD polycrystalline silicon layer and a removal of the sacrificial oxide layer by lateral etching hydrofluoric acid to undercut the polysilicon layer completely. SEM observations show an upward deflection at the end of the cantilever due to film stress gradient and also adherence between device and substrate. Strain relaxation measured by beam contraction decreases when the cantilever width increases.

Paper Details

Date Published: 23 September 1996
PDF: 11 pages
Proc. SPIE 2879, Micromachining and Microfabrication Process Technology II, (23 September 1996); doi: 10.1117/12.251202
Show Author Affiliations
Sandrine Lucas, Univ. de Rennes I (France)
King Kis-Sion, Univ. de Rennes I (France)
Jacques Pinel, Univ. de Rennes I (France)
Olivier Bonnaud, Univ. de Rennes I (France)

Published in SPIE Proceedings Vol. 2879:
Micromachining and Microfabrication Process Technology II
Stella W. Pang; Shih-Chia Chang, Editor(s)

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