Share Email Print

Proceedings Paper

Recent progress in GaN-based vertical-cavity surface-emitting lasers with lateral optical confinement due to an incorporated curved mirror
Author(s): Hiroshi Nakajima; Tatsushi Hamaguchi; Masayuki Tanaka; Masamichi Ito; Tatsuro Jyokawa; Tatsuya Mato; Kentaro Hayashi; Maho Ohara; Noriko Kobayashi; Hideki Watanabe; Rintaro Koda; Katsunori Yanashima
Format Member Price Non-Member Price
PDF $17.00 $21.00

Paper Abstract

The recent progress of GaN-based vertical-cavity surface-emitting lasers (VCSELs) with incorporated curved mirrors at one end of their cavities is reviewed. GaN-VCSELs consisting of 3 InGaN/GaN quantum wells, current apertures formed by boron ion implantation, and curved mirrors at one end of the cavities were fabricated. The near-field and far-field patterns exhibited Gaussian-like profiles, and their divergences agreed well with the theoretical values calculated from the radius of curvature of the curved mirror and the cavity length. The near-field beam waist for a GaNVCSEL with a 6-μm current aperture was as small as 1.4 μm (half width at 1/e2), which indicated that the light was laterally confined by the incorporated curved mirror and that the current aperture could be made smaller than 6 μm. For a GaN-VCSEL with a current aperture of 4μm, a threshold current of as low as 0.56 mA (Jth = 4.5 kA/cm2) was obtained at room temperature under CW operation at a wavelength of 451.8 nm. To the best of our knowledge, this is the lowest threshold current reported among all-dielectric DBR type GaN-VCSELs and is comparable with the lowest value reported for GaN-VCSELs that have a two-dimensional quantum well structure. The authors believe this result to be a milestone for the realization of GaN-VCSELs with extremely low power consumption.

Paper Details

Date Published: 1 March 2019
PDF: 6 pages
Proc. SPIE 10918, Gallium Nitride Materials and Devices XIV, 109181J (1 March 2019); doi: 10.1117/12.2511469
Show Author Affiliations
Hiroshi Nakajima, Sony Corp. (Japan)
Tatsushi Hamaguchi, Sony Corp. (Japan)
Masayuki Tanaka, Sony Corp. (Japan)
Masamichi Ito, Sony Corp. (Japan)
Tatsuro Jyokawa, Sony Corp. (Japan)
Tatsuya Mato, Sony Corp. (Japan)
Kentaro Hayashi, Sony Corp. (Japan)
Maho Ohara, Sony Corp. (Japan)
Noriko Kobayashi, Sony Corp. (Japan)
Hideki Watanabe, Sony Corp. (Japan)
Rintaro Koda, Sony Corp. (Japan)
Katsunori Yanashima, Sony Corp. (Japan)

Published in SPIE Proceedings Vol. 10918:
Gallium Nitride Materials and Devices XIV
Hiroshi Fujioka; Hadis Morkoç; Ulrich T. Schwarz, Editor(s)

© SPIE. Terms of Use
Back to Top
Sign in to read the full article
Create a free SPIE account to get access to
premium articles and original research
Forgot your username?