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Proceedings Paper

Progress in dilute nitride lasers for high-power and photonic-integration applications (Conference Presentation)
Author(s): Mircea Guina

Paper Abstract

Dilute nitride technology has significantly progressed towards fulfilling their exceptional promises for the development of optoelectronic devices. Current technology level renders possible practical applications. At the same time it is increasingly becoming apparent that dilute nitrides are poised to make a stronger impact on other applications areas than the telecom field, which motivated many of the initial developments related to this material system. For example, features such as uncooled operation of laser diodes and semiconductor amplifiers could have a strong impact on the development of integrated circuits where the high level of integration and the thermal conditions would make uncooled operation of the III-V components extremely important. The benefits of dilute nitride technology have also been leveraged to high power lasers, in particular emitting within the 1150-1240 nm window, which is important for reaching yellow-orange domain via frequency doubling. The presentation reviews state-of-the-art developments of GaInNAs optolectronic technology with a focus on laser diodes and components with in-plane architecture. Highlights include laser diodes emitting more than 500 mW in single-mode operation near 1.2 µm transparent band of Si. A very important feature addressed is wavelength and power stability, which are kept almost constant in a temperature range extending to 80 °C. As a more advanced approach towards monolithic integration of GaAs light emitters on Si, we review the progress in developing 1.3 µm GaInNAs laser diodes on Ge/SiGe platform.

Paper Details

Date Published: 4 March 2019
PDF
Proc. SPIE 10939, Novel In-Plane Semiconductor Lasers XVIII, 1093902 (4 March 2019); doi: 10.1117/12.2511432
Show Author Affiliations
Mircea Guina, Tampere Univ. of Technology (Finland)


Published in SPIE Proceedings Vol. 10939:
Novel In-Plane Semiconductor Lasers XVIII
Alexey A. Belyanin; Peter M. Smowton, Editor(s)

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