Quantum dots have attractive potential for multiple junction and intermediate band solar cells. However, the device level modeling of quantum dot based solar cells is a challenging task, since it inherently requires multiscale approaches combining nano- and micro-scale descriptions at an affordable computational cost. In this work quantum dot solar cells are studied by means of a multiscale model based on a semi-classical transport-Poisson framework enriched by a proper treatment of the quantum dot dynamics. The impact of a few design and physical parameters is investigated, providing better understanding of experimental results reported in literature.

Date Published: 27 February 2019
PDF: 8 pages
Proc. SPIE 10913, Physics, Simulation, and Photonic Engineering of Photovoltaic Devices VIII, 109131N (27 February 2019); doi: 10.1117/12.2511151

Published in SPIE Proceedings Vol. 10913:
Physics, Simulation, and Photonic Engineering of Photovoltaic Devices VIII
Alexandre Freundlich; Laurent Lombez; Masakazu Sugiyama, Editor(s)