Kinetics of solid-phase epitaxy of amorphous alumina deposited by atomic layer deposition will be reported. Also, discrete micro-LED fabrication and mechanical lift-off the micro-LED arrays will be reported in this presentation. [1] D. Moon et al., “An ultra-thin compliant sapphire membrane for the growth of less strained, less defective GaN,” J. Crystal Growth 441, 52-57 (2016). [2] J. Jeong et al., “Solid-phase epitaxy of a cavity-shaped amorphous alumina nanomembrane structure on a sapphire substrate,” J. Crystal Growth, 498, 130-136 (2018).

Date Published: 13 March 2019
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Proc. SPIE 10918, Gallium Nitride Materials and Devices XIV, 1091803 (13 March 2019); doi: 10.1117/12.2511100

Published in SPIE Proceedings Vol. 10918:
Gallium Nitride Materials and Devices XIV
Hiroshi Fujioka; Hadis Morkoç; Ulrich T. Schwarz, Editor(s)