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Proceedings Paper

Optical stimulated emission in AlGaN/InGaN ultraviolet multi-quantum-well structures
Author(s): Ping Chen; Young Jae Park; Yuh-Shiuan Liu; Theeradetch Detchprohm; P. Douglas Yoder; Shyh-Chiang Shen; Russell D. Dupuis
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Paper Abstract

Two different structures of AlGaN/InGaN ultraviolet (UV) multiple quantum wells (MQWs) were grown in a metalorganic chemical vapor deposition (MOCVD) system, and their performance under optically pumped stimulated emission were experimentally investigated. During the MOCVD epitaxial growth of the AlGaN/InGaN MQWs, the growth rate of the AlGaN quantum barriers (QBs) was intentionally reduced to improve the surface morphology. Atomic-force microscopy (AFM) images show that the AlGaN QBs have a smooth surface with clear step flow patterns. The surface morphology of InGaN QWs was improved by thermal annealing effect when the growth temperature rose to the one of the AlGaN QBs. With optical confinement layers on both the n- and p-sides, the threshold pumping power density of optical stimulated emission for AlGaN/InGaN MQWs was determined to be 168 kW/cm2. In order to reduce the negative effect of the interface between AlGaN QBs and InGaN QWs, another MQW structure with a larger quantum well thickness was designed and epitaxial grown. The optical investigation of sample B showed a threshold pumping power density of 124 kW/cm2, which is 26% lower than sample A.

Paper Details

Date Published: 1 March 2019
PDF: 6 pages
Proc. SPIE 10940, Light-Emitting Devices, Materials, and Applications, 1094005 (1 March 2019); doi: 10.1117/12.2510999
Show Author Affiliations
Ping Chen, Georgia Institute of Technology (United States)
Institute of Semiconductors (China)
Univ. of Chinese Academy of Sciences (China)
Young Jae Park, Georgia Institute of Technology (United States)
Yuh-Shiuan Liu, Georgia Institute of Technology (United States)
Theeradetch Detchprohm, Georgia Institute of Technology (United States)
P. Douglas Yoder, Georgia Institute of Technology (United States)
Shyh-Chiang Shen, Georgia Institute of Technology (United States)
Russell D. Dupuis, Georgia Institute of Technology (United States)

Published in SPIE Proceedings Vol. 10940:
Light-Emitting Devices, Materials, and Applications
Jong Kyu Kim; Michael R. Krames; Martin Strassburg, Editor(s)

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