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Proceedings Paper

Tunable external cavity laser diode based on wavelength controlled self-assembled InAs quantum dots for swept-source optical coherence tomography applications at 1100 nm wavelength band
Author(s): Nobuhiko Ozaki; David Childs; Aleksandr Boldin; Daigo Ikuno; Katsuya Onoue; Hirotaka Ohsato; Eiichiro Watanabe; Naoki Ikeda; Yoshimasa Sugimoto; Richard Hogg
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Paper Abstract

We fabricated and characterized a grating-coupled external cavity laser with gain chips including self-assembled InAs quantum dots (QDs) for swept-source optical coherence tomography applications. By controlling the emission wavelength of the self-assembled InAs QDs, tunable lasing at a wavelength band of 1–1.1 μm was obtained, which represents an optimal balance between absorption and scattering in biological tissues. Straight and J-shaped edgeemitting ridge waveguides (RWGs) were fabricated on a GaAs-based waveguide layer containing four InAs QDs layers. A diffraction grating with the quasi-Littrow configuration was employed as an external cavity for the fiber-coupled diodes. Electroluminescence spectra from the QD-based diodes revealed that broadband amplified spontaneous emissions appeared in a J-shaped RWG, whereas Fabry–Perot lasing occurred in the straight RWG. The external cavity was then introduced for the diode with a J-shaped RWG, and a tuning range of 65 nm centered at approximately 1100 nm was obtained from the QD gain chip with the J-shaped RWG.

Paper Details

Date Published: 1 March 2019
PDF: 6 pages
Proc. SPIE 10939, Novel In-Plane Semiconductor Lasers XVIII, 1093911 (1 March 2019); doi: 10.1117/12.2509984
Show Author Affiliations
Nobuhiko Ozaki, Univ. of Glasgow (United Kingdom)
Wakayama Univ. (Japan)
David Childs, Univ. of Glasgow (United Kingdom)
Aleksandr Boldin, Univ. of Glasgow (United Kingdom)
Daigo Ikuno, Wakayama Univ. (Japan)
Katsuya Onoue, Wakayama Univ. (Japan)
Hirotaka Ohsato, National Institute for Materials Science (Japan)
Eiichiro Watanabe, National Institute for Materials Science (Japan)
Naoki Ikeda, National Institute for Materials Science (Japan)
Yoshimasa Sugimoto, National Institute for Materials Science (Japan)
Richard Hogg, Univ. of Glasgow (United Kingdom)

Published in SPIE Proceedings Vol. 10939:
Novel In-Plane Semiconductor Lasers XVIII
Alexey A. Belyanin; Peter M. Smowton, Editor(s)

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