Share Email Print

Proceedings Paper

MOICANA: monolithic cointegration of QD-based InP on SiN as a versatile platform for the demonstration of high-performance and low-cost PIC transmitters
Author(s): K. Vyrsokinos; D. Chatzitheocharis; M. Papadovasilakis; D. Ketzaki; C. Calo; C. Caillaud; D. Sacchetto; M. Zervas; J. P. Reithmaier; V. Sichkovskyi; G. Eisenstein; M. Orenstein; B. Wohlfeil; G. Mehrpoor; E. Mentovich; D. Kalavrouziotis; M. A. G. Porcel; A. Hinojosa
Format Member Price Non-Member Price
PDF $17.00 $21.00

Paper Abstract

The integration of optical sources in Si photonic transceivers has relied so far on externally coupled III-V laser dies within the assembly. These hybrid approaches are however complex and expensive, as there are additional cost-increasing factors coming from the redundant testing of the pre- and post-coupled laser photonic chips. Further optimization of Photonic Integrated Circuits (PICs) cost and performance can be obtained only with radical technology advancements, such as the “holy grail” of Silicon Photonics; the monolithic integration of III-V sources on Si substrates. MOICANA project funded by EU Horizon 2020 framework targets to develop the technological background for the epitaxy of InP Quantum Dots directly on Si by Selective Area Growth with the best-in-class, in terms of losses and temperature sensitivity, in a CMOS fab, i.e. the SiN waveguide technology. In addition, MOICANA will develop the necessary interface for the seamless light transition between the III-V active and the SiN passive part of the circuitry featuring advanced multiplexing functionality and a combination of efficient and broadband fiber coupling. Through this unique platform, MOICANA aims to demonstrate low cost, inherent cooler-less and energy efficient transmitters, attributes stemming directly from the low loss SiN waveguide technology and the QD nature of the laser’s active region. MOICANA is targeting to exploit the advantages of the monolithic integrated PICs for the demonstration of large volume single-channel and WDM transmitter modules for data center interconnects, 5G mobile fronthaul and coherent communication applications.

Paper Details

Date Published: 4 March 2019
PDF: 11 pages
Proc. SPIE 10924, Optical Interconnects XIX, 1092410 (4 March 2019); doi: 10.1117/12.2509401
Show Author Affiliations
K. Vyrsokinos, Aristotle Univ. of Thessaloniki (Greece)
D. Chatzitheocharis, Aristotle Univ. of Thessaloniki (Greece)
M. Papadovasilakis, Aristotle Univ. of Thessaloniki (Greece)
D. Ketzaki, Aristotle Univ. of Thessaloniki (Greece)
C. Calo, III-V Lab. (France)
C. Caillaud, III-V Lab. (France)
D. Sacchetto, LiGenTec SA (Switzerland)
M. Zervas, LiGenTec SA (Switzerland)
J. P. Reithmaier, Univ. Kassel (Germany)
V. Sichkovskyi, Univ. Kassel (Germany)
G. Eisenstein, Technion-Israel Institute of Technology (Israel)
M. Orenstein, Technion-Israel Institute of Technology (Israel)
B. Wohlfeil, ADVA AG Optical Networking (Germany)
G. Mehrpoor, ADVA AG Optical Networking (Germany)
Lehrstuhl für Hochfrequenztechnik (Germany)
E. Mentovich, Mellanox Technologies, Ltd. (Israel)
D. Kalavrouziotis, Mellanox Technologies, Ltd. (Israel)
M. A. G. Porcel, VLC Photonics S.L. (Spain)
A. Hinojosa, VLC Photonics S.L. (Spain)

Published in SPIE Proceedings Vol. 10924:
Optical Interconnects XIX
Henning Schröder; Ray T. Chen, Editor(s)

© SPIE. Terms of Use
Back to Top
Sign in to read the full article
Create a free SPIE account to get access to
premium articles and original research
Forgot your username?