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Proceedings Paper

Optical field effect transistor with an indium tin oxide gate electrode
Author(s): J. B. Fodje; D. Mukherjee; Cyril A. Hogarth
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Paper Abstract

InP is a very promising material for electronic and optoelectronic devices, especially for heterojunction devices employing InGaAs as the low energy gap material. However, the low metal-semiconductor barrier height of n-InP (phib less than or equal to 0.5 eV) and the lack of reliable oxide-insulator technology, limit the number of applications severely. Here, the need for an oxide-insulator layer is eliminated with a simple one step deposition technique. We report the enhancement of the Schottky barrier height in n-InP using a dry, room temperature indium tin oxide (ITO) film deposition technique in a controlled oxygen and argon partial pressure environment. This process appears to produce a stable reproducible surface. Resistivity values as low as 2 by 10-5 (Omega) cm and optical transmission values greater than 90% in the visible and near-IR region of the spectrum were obtained. Barrier height values as high as phib equals 0.89 eV have been obtained from current-voltage (I-V) characteristics that were linear over several orders of magnitude of current with an interface trap time constant of 7.07 by 10-6s obtained from conductance-frequency (G-f) measurements. The enhancement in the barrier height is explained by an analysis of the ITO/InP interface. This process is being investigated for fabricating a highly transparent ITO gate electrode to an InP optical field effect transistor (OPFET) structure.

Paper Details

Date Published: 13 September 1996
PDF: 6 pages
Proc. SPIE 2877, Optical Characterization Techniques for High-Performance Microelectronic Device Manufacturing III, (13 September 1996); doi: 10.1117/12.250937
Show Author Affiliations
J. B. Fodje, South Bank Univ. (United Kingdom)
D. Mukherjee, South Bank Univ. (United Kingdom)
Cyril A. Hogarth, Brunel Univ. (United Kingdom)

Published in SPIE Proceedings Vol. 2877:
Optical Characterization Techniques for High-Performance Microelectronic Device Manufacturing III
Damon K. DeBusk; Ray T. Chen, Editor(s)

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