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Proceedings Paper

SOG etch-back process induced surface roughness
Author(s): Po-Tao Chu; Sen-Fu Chen; Jie-Shin Wu; Chih-Chien Hung; Ting-Huang Lin; Ying-Chen Chao
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Paper Abstract

SOG film surface roughness had been observed after SOG etch- back process. The etching recipes' total pressure and the CF4/CHF3 etchant gas ratio had been identified to be the two dominant factors which will determine the degree of surface roughness after etch-back. The high total gas pressure and high gas ratio etch-back recipe can minimize the roughness. However, the high pressure and gas ratio trends will result in poor global planarization. In this study, the optimal SOG etch-back recipe had been determined based on the degree of SOG roughness and global planarization. The degree of roughness was measured by the Atomic Force Microscopy.

Paper Details

Date Published: 13 September 1996
PDF: 8 pages
Proc. SPIE 2875, Microelectronic Device and Multilevel Interconnection Technology II, (13 September 1996); doi: 10.1117/12.250877
Show Author Affiliations
Po-Tao Chu, Taiwan Semiconductor Manufacturing Co. (Taiwan)
Sen-Fu Chen, Taiwan Semiconductor Manufacturing Co. (Taiwan)
Jie-Shin Wu, Taiwan Semiconductor Manufacturing Co. (Taiwan)
Chih-Chien Hung, Taiwan Semiconductor Manufacturing Co. (Taiwan)
Ting-Huang Lin, Taiwan Semiconductor Manufacturing Co. (Taiwan)
Ying-Chen Chao, Taiwan Semiconductor Manufacturing Co. (Taiwan)


Published in SPIE Proceedings Vol. 2875:
Microelectronic Device and Multilevel Interconnection Technology II
Ih-Chin Chen; Nobuo Sasaki; Divyesh N. Patel; Girish A. Dixit, Editor(s)

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