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Proceedings Paper

Comparison of spin-on materials in IMD planarization
Author(s): Simon Y. M. Chooi; Chew-Hoe Ang; Jia Zhen Zheng; Lap Hung Chan
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Paper Abstract

This paper describes the characterization of an etchback process for the new AlliedSignal's Accuspin 418 and Hitachi Chemical's HSG R7-13 low dielectric constant silsesquioxane spin-on polymers and the application to the inter-metal dielectric scheme of a 0.35 micrometers device. A comparison with a conventional polysiloxane spin-on glass (AlliedSignal's Accuglass 214) is also briefly discussed. The predominant factor affecting the selectivity of PECVD oxide to spin-on polymer is the CHF3CF4 flow. A low selectivity in which the spin-on polymer etches faster was found to rid of spin-on polymer on top of large metal features where vias may be cut while simultaneously leaving behind sufficient oxide on top of metal lines and the spin-on polymer in the metal spaces. After etchback, a thick PECVD oxide is deposited and planarized by chemical mechanical polishing.

Paper Details

Date Published: 13 September 1996
PDF: 10 pages
Proc. SPIE 2875, Microelectronic Device and Multilevel Interconnection Technology II, (13 September 1996); doi: 10.1117/12.250876
Show Author Affiliations
Simon Y. M. Chooi, Chartered Semiconductor Manufacturing Fab II (Singapore)
Chew-Hoe Ang, Chartered Semiconductor Manufacturing Fab II (Singapore)
Jia Zhen Zheng, Chartered Semiconductor Manufacturing Fab II (Singapore)
Lap Hung Chan, Chartered Semiconductor Manufacturing Ltd. (Singapore)

Published in SPIE Proceedings Vol. 2875:
Microelectronic Device and Multilevel Interconnection Technology II
Ih-Chin Chen; Nobuo Sasaki; Divyesh N. Patel; Girish A. Dixit, Editor(s)

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