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Proceedings Paper

Influence of carbon contamination on ultrathin gate oxide reliability
Author(s): Toshiyuki Iwamoto; Toshiki Miyake; Tadahiro Ohmi
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Paper Abstract

When Si wafer is transported after gate oxidation process, the gate oxide surface is exposed to the clean room air and hydro-carbons in the clean room air adhere to the gate oxide surface. In this paper, we have demonstrated that the carbon contamination caused by the wafer exposure to the clean room air induces the degradation of the gate oxide reliability, and we have improved the gate oxide performance by using a closed system, where the oxidation is followed by in-situ phosphorous-doped polysilicon gate formation. Carbon contamination is serious problem for gate oxide film used under high electricfield condition such as a tunnel oxide for flush memories.

Paper Details

Date Published: 13 September 1996
PDF: 9 pages
Proc. SPIE 2875, Microelectronic Device and Multilevel Interconnection Technology II, (13 September 1996); doi: 10.1117/12.250867
Show Author Affiliations
Toshiyuki Iwamoto, Tohoku Univ. (Japan)
Toshiki Miyake, Tohoku Univ. (Japan)
Tadahiro Ohmi, Tohoku Univ. (Japan)


Published in SPIE Proceedings Vol. 2875:
Microelectronic Device and Multilevel Interconnection Technology II
Ih-Chin Chen; Nobuo Sasaki; Divyesh N. Patel; Girish A. Dixit, Editor(s)

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