Proceedings Paper
Materials and processing issues in the development of N2O/NO-based ultrathin oxynitride gate dielectrics for CMOS ULSI applications| Format | Member Price | Non-Member Price |
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Paper Abstract
This paper reviews recent developments in N2O- and NO- based oxynitride gate dielectrics for CMOS ULSI applications. The motivations and significant advantages of N2O/NO-based ultrathin oxynitride gate dielectrics for dual-gate CMOS ULSI are reviewed. Results will be presented to demonstrate the superior device reliability of ultra thin N2O/NO oxides over the control oxides, with particular focus on boron diffusion barrier properties, TDDB, and MOSFET hot carrier immunity.
Paper Details
Date Published: 13 September 1996
PDF: 13 pages
Proc. SPIE 2875, Microelectronic Device and Multilevel Interconnection Technology II, (13 September 1996); doi: 10.1117/12.250864
Published in SPIE Proceedings Vol. 2875:
Microelectronic Device and Multilevel Interconnection Technology II
Ih-Chin Chen; Nobuo Sasaki; Divyesh N. Patel; Girish A. Dixit, Editor(s)
PDF: 13 pages
Proc. SPIE 2875, Microelectronic Device and Multilevel Interconnection Technology II, (13 September 1996); doi: 10.1117/12.250864
Show Author Affiliations
Byeong Y. Kim, Univ. of Texas/Austin (United States)
Dirk Wristers, Univ. of Texas/Austin (United States)
Dirk Wristers, Univ. of Texas/Austin (United States)
Dim-Lee Kwong, Univ. of Texas/Austin (United States)
Published in SPIE Proceedings Vol. 2875:
Microelectronic Device and Multilevel Interconnection Technology II
Ih-Chin Chen; Nobuo Sasaki; Divyesh N. Patel; Girish A. Dixit, Editor(s)
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