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Proceedings Paper

Manufacturing sensitivity analysis of a 0.18-micron NMOSFET
Author(s): Darryl Angelo; Scott A. Hareland; Shamsul A. Khan; Khaled Hasnat; Al F. Tasch Jr.; Peter Zeitzoff
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Paper Abstract

The control over the random variations in manufacturing processes and equipment has become increasingly critical for deep submicron MOS IC technology. This analysis involves correlating the sensitivity of eight key device electrical characteristics (responses) of a 0.18 micrometers NMOSFET to the anticipated manufacturing variations in its structural and doping parameters (inputs). Using TCAD software, a 0.18 micrometers NMOSFET has been designed and optimized to be as representative as possible of a device intended for use by industry, and has then been used as the nominal structure for the sensitivity analysis. Nine input parameters such as gate length, gate oxide, etc. were varied in accordance with a three-level Box-Behnken design, and model equations were generated. A Monte Carlo simulator was also developed to extract the statistical distribution of each response and compare it to a normal distribution that best fit the data. These models allow a quick assessment of the sensitivity of the key device electrical parameters to manufacturing variations in the NMOSFET structural and doping parameters.

Paper Details

Date Published: 13 September 1996
PDF: 10 pages
Proc. SPIE 2875, Microelectronic Device and Multilevel Interconnection Technology II, (13 September 1996); doi: 10.1117/12.250859
Show Author Affiliations
Darryl Angelo, Univ. of Texas/Austin (United States)
Scott A. Hareland, Univ. of Texas/Austin (United States)
Shamsul A. Khan, Univ. of Texas/Austin (United States)
Khaled Hasnat, Univ. of Texas/Austin (United States)
Al F. Tasch Jr., Univ. of Texas/Austin (United States)
Peter Zeitzoff, SEMATECH (United States)

Published in SPIE Proceedings Vol. 2875:
Microelectronic Device and Multilevel Interconnection Technology II
Ih-Chin Chen; Nobuo Sasaki; Divyesh N. Patel; Girish A. Dixit, Editor(s)

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