This paper reviews scaled reliability of deep sub-micron MOSFETs, including hot-carrier effects and oxide-breakdown. On the point of practical device design, the former constrains the maximum applicable voltage with the scaling factor of k^-1/2. The latter give that with the scaling fact of k^-1. It is shown that the limiting factor of operating voltage switches from hot-carrier effects to thin oxide reliability at a 0.25 micrometers device.

Date Published: 13 September 1996
PDF: 10 pages
Proc. SPIE 2875, Microelectronic Device and Multilevel Interconnection Technology II, (13 September 1996); doi: 10.1117/12.250856

Published in SPIE Proceedings Vol. 2875:
Microelectronic Device and Multilevel Interconnection Technology II
Ih-Chin Chen; Nobuo Sasaki; Divyesh N. Patel; Girish A. Dixit, Editor(s)