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Proceedings Paper

Reliability scaling in deep submicron MOSFETs
Author(s): Tadahiko Horiuchi; Hiroshi Ito; Naohiko Kimizuka
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Paper Abstract

This paper reviews scaled reliability of deep sub-micron MOSFETs, including hot-carrier effects and oxide-breakdown. On the point of practical device design, the former constrains the maximum applicable voltage with the scaling factor of k-1/2. The latter give that with the scaling fact of k-1. It is shown that the limiting factor of operating voltage switches from hot-carrier effects to thin oxide reliability at a 0.25 micrometers device.

Paper Details

Date Published: 13 September 1996
PDF: 10 pages
Proc. SPIE 2875, Microelectronic Device and Multilevel Interconnection Technology II, (13 September 1996); doi: 10.1117/12.250856
Show Author Affiliations
Tadahiko Horiuchi, NEC Corp. (Japan)
Hiroshi Ito, NEC Corp. (Japan)
Naohiko Kimizuka, NEC Corp. (Japan)

Published in SPIE Proceedings Vol. 2875:
Microelectronic Device and Multilevel Interconnection Technology II
Ih-Chin Chen; Nobuo Sasaki; Divyesh N. Patel; Girish A. Dixit, Editor(s)

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