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Proceedings Paper

Multifractal point defect clusters in subsurface damaged layer of semiconductor wafers
Author(s): Alexander P. Fedtchouk; Ruslana A. Rudenko; A. A. Fedtchouk
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Paper Abstract

We have constructed an automated laser scanning complex oriented to semiconductor wafers defectiveness monitoring. The surface photo-voltage method has proved to be sensitive to various types of surface contamination and damages. The fractal approach used for the first time for theoretically maximal value of VLSI yield estimation has demonstrated high prognostic ability.

Paper Details

Date Published: 12 September 1996
PDF: 11 pages
Proc. SPIE 2874, Microelectronic Manufacturing Yield, Reliability, and Failure Analysis II, (12 September 1996); doi: 10.1117/12.250845
Show Author Affiliations
Alexander P. Fedtchouk, Odessa State Univ. (Ukraine)
Ruslana A. Rudenko, Odessa State Univ. (Ukraine)
A. A. Fedtchouk, Odessa State Univ. (Ukraine)

Published in SPIE Proceedings Vol. 2874:
Microelectronic Manufacturing Yield, Reliability, and Failure Analysis II
Ali Keshavarzi; Sharad Prasad; Hans-Dieter Hartmann, Editor(s)

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