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Proceedings Paper

Spatially resolved study of Schottkey barriers
Author(s): Carlo Coluzza; J. Almeida; Tiziana Dell'Orto; O. Bergossi; Michel Spajer; Stephane Davy; Daniel A. Courjon; Antonio Cricenti; Renato Generosi; P. Perfetti; G. Faini
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Paper Abstract

We studied the fully-formed (80 angstroms) Pt/GaP and (140 angstroms) Au/GaAs interfaces by scanning near-field optics microscopy, internal photoemission, atomic force microscopy, and by x-ray photoemission electron microscopy. These complementary techniques enabled us to correlate the spatial variations of the diodes transport properties with the chemical and topographic inhomogeneities of the buried metal-semiconductor interfaces.

Paper Details

Date Published: 18 September 1996
PDF: 11 pages
Proc. SPIE 2782, Optical Inspection and Micromeasurements, (18 September 1996); doi: 10.1117/12.250789
Show Author Affiliations
Carlo Coluzza, Univ. degli Studi di Roma La Sapienza (Italy)
J. Almeida, Swiss Federal Institute of Technology (Switzerland)
Tiziana Dell'Orto, Ctr. di Competenza per la Microelettronica (Italy)
O. Bergossi, Univ. de Franche-Comte (France)
Michel Spajer, Univ. de Franche-Comte (France)
Stephane Davy, Univ. de Franche-Comte (France)
Daniel A. Courjon, Univ. de Franche-Comte (France)
Antonio Cricenti, Instituto di Struttura della Materia/CNR (Italy)
Renato Generosi, Instituto di Struttura della Materia/CNR (Italy)
P. Perfetti, Instituto di Struttura della Materia/CNR (Italy)
G. Faini, L2M/CNRS (France)

Published in SPIE Proceedings Vol. 2782:
Optical Inspection and Micromeasurements
Christophe Gorecki, Editor(s)

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