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940nm high-power laser diode based on AlGaAs/InGaAs GRIN-SCH and asymmetric structure
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Paper Abstract

In this paper, we report the results of our investigation about 940nm AlGaAs/InGaAs single mode laser diodes adopting graded index separate confinement hetero structures (GRIN-SCH) and p, n-clad asymmetric structures with improved temperature and small divergence beams characteristics under the high output power operation for a 3D motion recognition sensors. The GRIN-SCH design provides good carrier confinement and prevents current leakage by adding a grading layer between clad and waveguide layers. In addition, the dopant concentration of the cladding layer is optimized to reduce resistance and internal loss. At the optical power 300mW, measured average values of threshold current (Ith), operating current (Iop), slop efficiency (SE), operating voltage (Vop), peak wavelength (λ) are 80mA, 352mA, 1.12mW/mA, 1.87V, 940nm respectively. Also, we could obtain catastrophic optical damage (COD) of 750mW and excellent long-term reliability characteristic 60°C with TO-56 package. From the experimental measurement results, the developed 940nm high power laser diode is suitable optical source for the sensor applications including 3D motion recognition sensors.

Paper Details

Date Published: 4 March 2019
PDF: 8 pages
Proc. SPIE 10900, High-Power Diode Laser Technology XVII, 109000L (4 March 2019); doi: 10.1117/12.2507364
Show Author Affiliations
Jeong-Geun Kwak, QSI Co., Ltd. (Korea, Republic of)
Seung-Hyun Sung, QSI Co., Ltd. (Korea, Republic of)
Jong-Keun Park, QSI Co., Ltd. (Korea, Republic of)
Jeong-Hyun Park, QSI Co., Ltd. (Korea, Republic of)
An-Sik Choi, QSI Co., Ltd. (Korea, Republic of)
Tae-Kyung Kim, QSI Co., Ltd. (Korea, Republic of)


Published in SPIE Proceedings Vol. 10900:
High-Power Diode Laser Technology XVII
Mark S. Zediker, Editor(s)

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