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Highly efficient high-power pumps for QCW fiber lasers
Author(s): N. Moshegov; I. Berezin; A. Komissarov; P. Trubenko; D. Miftakhutdinov; I. Berishev; V. Chuyanov; N. Strougov; A. Ovtchinnikov; V. Gapontsev
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Paper Abstract

We report on new generation high power multimode pumps based on long cavity AlGaInAs/GaAs 9XX-nm chips. These chips are produced in high volume by Solid Source MBE growth on four-inch diameter GaAs wafers. Uniformity of material grown on multi-four-inch wafers is presented. We also demonstrate the uniformity of lasing parameters of ChipOn-Submount (COS) across individual four-inch wafers and across the entire 19”-diameter MBE-platen growth area. We discuss the performance of high power pumps based on simple spatial beam combining. Ultimate ex-fiber (~100 µm core diameter) power launched in CW and QCW modes of operation was recorded in excess of 350 W and 450W, correspondingly. We demonstrate fully wavelength stabilized operation in driving current range in excess of 22A and exfiber power in excess of 135W.

Paper Details

Date Published: 4 March 2019
PDF: 10 pages
Proc. SPIE 10900, High-Power Diode Laser Technology XVII, 109000G (4 March 2019); doi: 10.1117/12.2506537
Show Author Affiliations
N. Moshegov, IPG Photonics Corp. (United States)
I. Berezin, IPG Photonics Corp. (United States)
A. Komissarov, IPG Photonics Corp. (United States)
P. Trubenko, IPG Photonics Corp. (United States)
D. Miftakhutdinov, IPG Photonics Corp. (United States)
I. Berishev, IPG Photonics Corp. (United States)
V. Chuyanov, IPG Photonics Corp. (United States)
N. Strougov, IPG Photonics Corp. (United States)
A. Ovtchinnikov, IPG Photonics Corp. (United States)
V. Gapontsev, IPG Photonics Corp. (United States)

Published in SPIE Proceedings Vol. 10900:
High-Power Diode Laser Technology XVII
Mark S. Zediker, Editor(s)

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