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Proceedings Paper

Optical probing of field dependent effects in GaAs photoconductive switches
Author(s): William R. Donaldson; Lawrence E. Kingsley
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Paper Abstract

A new diagnostic technique for measuring electric fields on the surfaces of semiconductors is described. The diagnostic uses the Pockels effect which mixes the electric field on a semiconductor surface with that of an incident optical pulse in a nonlinear crystal rotating the polarization of the optical pulse. This rotation can be detected and used to extract the surface electric field. Electro-optic sampling as this technique is called allows us to study the physics of semiconductors subjected to high fields with 100-ps time resolution. We have seen field enhancements in GaAs in photoconductive switches which modeling has shown to be due to Gunn domains.

Paper Details

Date Published: 1 March 1991
PDF: 11 pages
Proc. SPIE 1378, Optically Activated Switching, (1 March 1991); doi: 10.1117/12.25057
Show Author Affiliations
William R. Donaldson, Univ. of Rochester (United States)
Lawrence E. Kingsley, Univ. of Rochester (United States)

Published in SPIE Proceedings Vol. 1378:
Optically Activated Switching
Fred J. Zutavern, Editor(s)

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