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Proceedings Paper

Surface flashover of silicon
Author(s): Paul Frazer Williams; Frank E. Peterkin; Tim Ridolfi; L. L. Buresh; B. J. Hankla
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Paper Abstract

We present high-speed shutter and streak photographs synchronized with sample current measurements which show clearly that in surface flashover of silicon in a vacuum ambient the current flows primanly in the silicon not in the ambient. We present S. E. M. photographs which show that this current is filamentary. Results obtained from samples with diffused p and n contacts show that the contacts exert a strong influence over the flashover characteristics.

Paper Details

Date Published: 1 March 1991
PDF: 9 pages
Proc. SPIE 1378, Optically Activated Switching, (1 March 1991); doi: 10.1117/12.25056
Show Author Affiliations
Paul Frazer Williams, Univ. of Nebraska/Lincoln (United States)
Frank E. Peterkin, Univ. of Nebraska/Lincoln (United States)
Tim Ridolfi, Univ. of Nebraska/Lincoln (United States)
L. L. Buresh, Univ. of Nebraska/Lincoln (United States)
B. J. Hankla, Univ. of Nebraska/Lincoln (United States)

Published in SPIE Proceedings Vol. 1378:
Optically Activated Switching
Fred J. Zutavern, Editor(s)

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