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Proceedings Paper

Triggering GaAs lock-on switches with laser diode arrays
Author(s): Guillermo M. Loubriel; Malcolm T. Buttram; Wesley D. Helgeson; Dan L. McLaughlin; Marty W. O'Malley; Fred J. Zutavern; Arye Rosen; Paul J. Stabile
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Paper Abstract

Laser diode arrays have been used to trigger GaAs Photoconducting Semiconductor Switches (PCSS) charged to voltages of up to 60 kV and conducting currents of 580 A. The driving forces behind the use of laser diode arrays are compactness elimination of complicated optics and the ability to run at high repetition rates. Laser diode arrays can trigger GaAs at high fields as the result of a new switching mode (lock-on) with very high carrier number gain. We have achieved switching of up to 10 MW in a 60 1 system with a pulse rise time of 500 ps. At 1. 2 MW we have achieved repetition rates of 1 kHz with switch rise time of 500 Ps for i0 shots. The laser diode array used for these experiments delivers a 166 W pulse. In a single shot mode we have switched 4 kA with a flash lamp pumped laser and 600 A with the 166 W array.

Paper Details

Date Published: 1 March 1991
PDF: 8 pages
Proc. SPIE 1378, Optically Activated Switching, (1 March 1991); doi: 10.1117/12.25052
Show Author Affiliations
Guillermo M. Loubriel, Sandia National Labs. (United States)
Malcolm T. Buttram, Sandia National Labs. (United States)
Wesley D. Helgeson, Sandia National Labs. (United States)
Dan L. McLaughlin, Sandia National Labs. (United States)
Marty W. O'Malley, Sandia National Labs. (United States)
Fred J. Zutavern, Sandia National Labs. (United States)
Arye Rosen, David Sarnoff Research Ctr. (United States)
Paul J. Stabile, David Sarnoff Research Ctr. (United States)

Published in SPIE Proceedings Vol. 1378:
Optically Activated Switching
Fred J. Zutavern, Editor(s)

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